JPS6423566A - Semiconductor fuse - Google Patents

Semiconductor fuse

Info

Publication number
JPS6423566A
JPS6423566A JP62179617A JP17961787A JPS6423566A JP S6423566 A JPS6423566 A JP S6423566A JP 62179617 A JP62179617 A JP 62179617A JP 17961787 A JP17961787 A JP 17961787A JP S6423566 A JPS6423566 A JP S6423566A
Authority
JP
Japan
Prior art keywords
psg
film
opening
fuse
via hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62179617A
Other languages
Japanese (ja)
Inventor
Toshiyuki Ogawa
Hisanori Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62179617A priority Critical patent/JPS6423566A/en
Publication of JPS6423566A publication Critical patent/JPS6423566A/en
Pending legal-status Critical Current

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent water from invading a PSG film from an opening part, by forming a peripheral via hole on the PSG film so as to surround a fuse part where a passivation film and the PSG film are removed, and by burying a PSG isolation wall made of aluminum into the via hole. CONSTITUTION:An aluminum electrode 1 on one side of a fuse is electrically connected with a polysilicon film 6 at a contact part 2. A passivation film and a PSG film are removed to form an opening 5 on a fuse part 7. An aluminum electrode 9 on the other side of the fuse is electrically connected with the polysilicon film 6 at a contact part 8. A peripheral via hole 4 is formed to surround the opening 5, and aluminum guard layers 3a, 3b are buried into this via hole. The passivation film on the fuse and the PSG opening 5 function to facilitate and complete fusing of the fuse. PSG films 12a, 12b are exposed on the opening 5, so that water on the surface can be easily absorbed. The PSG film is partitioned into parts on both sides of the opening part 5 and the inner circuit by the aluminum guard layers 3a, 3b buried into the via hole 4. Accordingly the water can be prevented from invading the PSG film from the opening 5. High reliability can be also obtained for damp-proof performance.
JP62179617A 1987-07-17 1987-07-17 Semiconductor fuse Pending JPS6423566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62179617A JPS6423566A (en) 1987-07-17 1987-07-17 Semiconductor fuse

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62179617A JPS6423566A (en) 1987-07-17 1987-07-17 Semiconductor fuse

Publications (1)

Publication Number Publication Date
JPS6423566A true JPS6423566A (en) 1989-01-26

Family

ID=16068885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62179617A Pending JPS6423566A (en) 1987-07-17 1987-07-17 Semiconductor fuse

Country Status (1)

Country Link
JP (1) JPS6423566A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215330A (en) * 1990-08-02 1993-06-01 Nsk Ltd. Pad for air bag device
US5990537A (en) * 1991-09-04 1999-11-23 Fujitsu Limited Semiconductor device with fuse
KR100557630B1 (en) * 2002-07-18 2006-03-10 주식회사 하이닉스반도체 Forming method for fuse of semiconductor device
KR100605599B1 (en) * 2001-12-31 2006-07-28 주식회사 하이닉스반도체 Semiconductor device and Method for fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215330A (en) * 1990-08-02 1993-06-01 Nsk Ltd. Pad for air bag device
US5990537A (en) * 1991-09-04 1999-11-23 Fujitsu Limited Semiconductor device with fuse
KR100605599B1 (en) * 2001-12-31 2006-07-28 주식회사 하이닉스반도체 Semiconductor device and Method for fabricating the same
KR100557630B1 (en) * 2002-07-18 2006-03-10 주식회사 하이닉스반도체 Forming method for fuse of semiconductor device

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