JPS6420640A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6420640A JPS6420640A JP17623087A JP17623087A JPS6420640A JP S6420640 A JPS6420640 A JP S6420640A JP 17623087 A JP17623087 A JP 17623087A JP 17623087 A JP17623087 A JP 17623087A JP S6420640 A JPS6420640 A JP S6420640A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wirings
- film
- melting point
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 10
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 229910018125 Al-Si Inorganic materials 0.000 abstract 1
- 229910018520 Al—Si Inorganic materials 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000002075 main ingredient Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000001376 precipitating effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17623087A JPS6420640A (en) | 1987-07-15 | 1987-07-15 | Semiconductor device and manufacture thereof |
KR1019880005634A KR880014647A (ko) | 1987-05-15 | 1988-05-14 | 반도체장치 및 그 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17623087A JPS6420640A (en) | 1987-07-15 | 1987-07-15 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6420640A true JPS6420640A (en) | 1989-01-24 |
JPH0587144B2 JPH0587144B2 (enrdf_load_stackoverflow) | 1993-12-15 |
Family
ID=16009910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17623087A Granted JPS6420640A (en) | 1987-05-15 | 1987-07-15 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6420640A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0371657A (ja) * | 1989-08-10 | 1991-03-27 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPH04155823A (ja) * | 1990-10-18 | 1992-05-28 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JPH0526100U (ja) * | 1991-09-13 | 1993-04-06 | 吉村精機株式会社 | 衣類しわとり装置 |
JP2003075259A (ja) * | 2000-09-05 | 2003-03-12 | Nikon Corp | 熱型変位素子及びこれを用いた放射検出装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2356222B1 (es) | 2011-02-15 | 2012-05-31 | Sinterizados Y Metalurgia De Solsona, S.A. | Procedimiento para la fabricación de cojinetes deslizantes sinterizados. |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4921461A (enrdf_load_stackoverflow) * | 1972-04-19 | 1974-02-25 | ||
JPS56161670A (en) * | 1980-05-16 | 1981-12-12 | Hitachi Ltd | Semiconductor device |
JPS60117620A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6159856A (ja) * | 1984-08-31 | 1986-03-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS61170047A (ja) * | 1985-01-24 | 1986-07-31 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
-
1987
- 1987-07-15 JP JP17623087A patent/JPS6420640A/ja active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4921461A (enrdf_load_stackoverflow) * | 1972-04-19 | 1974-02-25 | ||
JPS56161670A (en) * | 1980-05-16 | 1981-12-12 | Hitachi Ltd | Semiconductor device |
JPS60117620A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6159856A (ja) * | 1984-08-31 | 1986-03-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS61170047A (ja) * | 1985-01-24 | 1986-07-31 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0371657A (ja) * | 1989-08-10 | 1991-03-27 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPH04155823A (ja) * | 1990-10-18 | 1992-05-28 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JPH0526100U (ja) * | 1991-09-13 | 1993-04-06 | 吉村精機株式会社 | 衣類しわとり装置 |
JP2003075259A (ja) * | 2000-09-05 | 2003-03-12 | Nikon Corp | 熱型変位素子及びこれを用いた放射検出装置 |
US6835932B2 (en) | 2000-09-05 | 2004-12-28 | Nikon Corporation | Thermal displacement element and radiation detector using the element |
Also Published As
Publication number | Publication date |
---|---|
JPH0587144B2 (enrdf_load_stackoverflow) | 1993-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |