JPS6418270A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS6418270A JPS6418270A JP62174543A JP17454387A JPS6418270A JP S6418270 A JPS6418270 A JP S6418270A JP 62174543 A JP62174543 A JP 62174543A JP 17454387 A JP17454387 A JP 17454387A JP S6418270 A JPS6418270 A JP S6418270A
- Authority
- JP
- Japan
- Prior art keywords
- gates
- memory cell
- electrons
- ejection
- interval
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000002347 injection Methods 0.000 abstract 3
- 239000007924 injection Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62174543A JPS6418270A (en) | 1987-07-13 | 1987-07-13 | Semiconductor memory device |
US07/218,303 US4907197A (en) | 1987-07-13 | 1988-07-12 | Non-volatile semiconductor memory device |
KR1019880008710A KR960012167B1 (ko) | 1987-07-13 | 1988-07-13 | 반도체기억장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62174543A JPS6418270A (en) | 1987-07-13 | 1987-07-13 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6418270A true JPS6418270A (en) | 1989-01-23 |
Family
ID=15980384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62174543A Pending JPS6418270A (en) | 1987-07-13 | 1987-07-13 | Semiconductor memory device |
Country Status (3)
Country | Link |
---|---|
US (1) | US4907197A (ja) |
JP (1) | JPS6418270A (ja) |
KR (1) | KR960012167B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100309139B1 (ko) * | 1994-12-16 | 2002-02-19 | 박종섭 | 비휘발성 메모리 소자 제조방법 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2600301B2 (ja) * | 1988-06-28 | 1997-04-16 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
US5231041A (en) * | 1988-06-28 | 1993-07-27 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gate |
US5168335A (en) * | 1988-07-15 | 1992-12-01 | Texas Instruments Incorporated | Electrically programmable, electrically erasable memory array cell with field plate |
US5111430A (en) * | 1989-06-22 | 1992-05-05 | Nippon Telegraph And Telephone Corporation | Non-volatile memory with hot carriers transmitted to floating gate through control gate |
US5047816A (en) * | 1990-08-21 | 1991-09-10 | Vlsi Technology, Inc. | Self-aligned dual-gate transistor |
US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US5477068A (en) * | 1992-03-18 | 1995-12-19 | Rohm Co., Ltd. | Nonvolatile semiconductor memory device |
JPH06120515A (ja) * | 1992-10-09 | 1994-04-28 | Oki Electric Ind Co Ltd | 半導体不揮発性メモリのデータ書き込み及びデータ消去方法 |
US5471422A (en) * | 1994-04-11 | 1995-11-28 | Motorola, Inc. | EEPROM cell with isolation transistor and methods for making and operating the same |
KR100219117B1 (ko) * | 1996-08-24 | 1999-09-01 | 구자홍 | 박막트랜지스터 액정표시장치 및 그 제조방법 |
US6534816B1 (en) | 1999-03-24 | 2003-03-18 | John M. Caywood | Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell |
US20040021170A1 (en) * | 1999-03-24 | 2004-02-05 | Caywood John M. | Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell |
US6384451B1 (en) | 1999-03-24 | 2002-05-07 | John Caywood | Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell |
US6548347B2 (en) * | 2001-04-12 | 2003-04-15 | Micron Technology, Inc. | Method of forming minimally spaced word lines |
DE10138585A1 (de) * | 2001-08-06 | 2003-03-06 | Infineon Technologies Ag | Speicherzelle |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57141969A (en) * | 1981-02-27 | 1982-09-02 | Toshiba Corp | Nonvolatile semiconductor memory |
US4513397A (en) * | 1982-12-10 | 1985-04-23 | Rca Corporation | Electrically alterable, nonvolatile floating gate memory device |
US4590503A (en) * | 1983-07-21 | 1986-05-20 | Honeywell Inc. | Electrically erasable programmable read only memory |
US4608591A (en) * | 1983-08-17 | 1986-08-26 | Rca Corporation | Electrically alterable programmable nonvolatile floating gate memory device |
US4752912A (en) * | 1985-05-14 | 1988-06-21 | Xicor, Inc. | Nonvolatile electrically alterable memory and method |
-
1987
- 1987-07-13 JP JP62174543A patent/JPS6418270A/ja active Pending
-
1988
- 1988-07-12 US US07/218,303 patent/US4907197A/en not_active Expired - Lifetime
- 1988-07-13 KR KR1019880008710A patent/KR960012167B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100309139B1 (ko) * | 1994-12-16 | 2002-02-19 | 박종섭 | 비휘발성 메모리 소자 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR960012167B1 (ko) | 1996-09-16 |
US4907197A (en) | 1990-03-06 |
KR890003033A (ko) | 1989-04-12 |
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