JPS6366049B2 - - Google Patents

Info

Publication number
JPS6366049B2
JPS6366049B2 JP53095334A JP9533478A JPS6366049B2 JP S6366049 B2 JPS6366049 B2 JP S6366049B2 JP 53095334 A JP53095334 A JP 53095334A JP 9533478 A JP9533478 A JP 9533478A JP S6366049 B2 JPS6366049 B2 JP S6366049B2
Authority
JP
Japan
Prior art keywords
pattern
film
photoresist
photoresist pattern
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53095334A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5522833A (en
Inventor
Kazuya Kikuchi
Tadanaka Yoneda
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9533478A priority Critical patent/JPS5522833A/ja
Publication of JPS5522833A publication Critical patent/JPS5522833A/ja
Publication of JPS6366049B2 publication Critical patent/JPS6366049B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP9533478A 1978-08-03 1978-08-03 Manufacturing of semiconductor device Granted JPS5522833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9533478A JPS5522833A (en) 1978-08-03 1978-08-03 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9533478A JPS5522833A (en) 1978-08-03 1978-08-03 Manufacturing of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5522833A JPS5522833A (en) 1980-02-18
JPS6366049B2 true JPS6366049B2 (enrdf_load_stackoverflow) 1988-12-19

Family

ID=14134807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9533478A Granted JPS5522833A (en) 1978-08-03 1978-08-03 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5522833A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884430A (ja) * 1981-11-14 1983-05-20 Daikin Ind Ltd レジスト膜の耐エツチング性増大方法
JPS63232330A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110374A (en) * 1977-03-08 1978-09-27 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5522833A (en) 1980-02-18

Similar Documents

Publication Publication Date Title
EP0238690B1 (en) Process for forming sidewalls
US4202914A (en) Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask
EP0046525A2 (en) Planar multi-level metal-insulator structure comprising a substrate, a conductive interconnection pattern and a superposed conductive structure and a method to form such a structure
JPH0445974B2 (enrdf_load_stackoverflow)
US3767492A (en) Semiconductor masking
JPS6366049B2 (enrdf_load_stackoverflow)
JPS6255693B2 (enrdf_load_stackoverflow)
JPS604221A (ja) 半導体装置の製造方法
JPH03108330A (ja) 半導体装置の製造方法
JPS5828735B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPH0562948A (ja) リフトオフ法によるパターン形成方法
JPS6025897B2 (ja) 半導体装置の製造方法
JPS63254728A (ja) レジストパタ−ンの形成方法
JPS5950053B2 (ja) 写真蝕刻方法
JPH02174121A (ja) 半導体製造工程におけるエッチング選択度を改善するための方法
JPS596560A (ja) 半導体装置の製造方法
JPH02218127A (ja) ドライエッチング方法
JPH02224331A (ja) 半導体装置の製造方法
JPH0294439A (ja) 半導体装置の製造方法
JPH04257238A (ja) 半導体装置の製造方法
JPH0618205B2 (ja) ヘテロ接合バイポ−ラトランジスタの製造方法
JPH02148725A (ja) 半導体集積回路の製造方法
JPS5892224A (ja) パタ−ン形成方法
JPS63164338A (ja) 半導体装置の製造方法
JPS61295643A (ja) 高密度配線層の形成方法