JPS6353711B2 - - Google Patents
Info
- Publication number
- JPS6353711B2 JPS6353711B2 JP56061710A JP6171081A JPS6353711B2 JP S6353711 B2 JPS6353711 B2 JP S6353711B2 JP 56061710 A JP56061710 A JP 56061710A JP 6171081 A JP6171081 A JP 6171081A JP S6353711 B2 JPS6353711 B2 JP S6353711B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gallium arsenide
- control electrode
- electron
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56061710A JPS57176773A (en) | 1981-04-23 | 1981-04-23 | Semiconductor device and manufacture thereof |
EP82302107A EP0064370B1 (en) | 1981-04-23 | 1982-04-23 | High electron mobility semiconductor device |
US06/371,465 US4663643A (en) | 1981-04-23 | 1982-04-23 | Semiconductor device and process for producing the same |
DE8282302107T DE3279795D1 (en) | 1981-04-23 | 1982-04-23 | High electron mobility semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56061710A JPS57176773A (en) | 1981-04-23 | 1981-04-23 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57176773A JPS57176773A (en) | 1982-10-30 |
JPS6353711B2 true JPS6353711B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-10-25 |
Family
ID=13179052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56061710A Granted JPS57176773A (en) | 1981-04-23 | 1981-04-23 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57176773A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59222965A (ja) * | 1983-06-02 | 1984-12-14 | Nec Corp | シヨツトキ−障壁ゲ−ト型電界効果トランジスタの製造方法 |
JPS605570A (ja) * | 1983-06-09 | 1985-01-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS61156889A (ja) * | 1984-12-28 | 1986-07-16 | Nec Corp | 半導体装置 |
JP2765843B2 (ja) * | 1987-12-18 | 1998-06-18 | 株式会社日立製作所 | 半導体装置 |
JP3058262B2 (ja) * | 1996-11-28 | 2000-07-04 | 日本電気株式会社 | ヘテロ接合型電界効果トランジスタ |
EP1865561B1 (en) * | 2006-06-07 | 2013-01-02 | Imec | An enhancement mode field effect device and the method of production thereof |
US8399911B2 (en) | 2006-06-07 | 2013-03-19 | Imec | Enhancement mode field effect device and the method of production thereof |
-
1981
- 1981-04-23 JP JP56061710A patent/JPS57176773A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57176773A (en) | 1982-10-30 |