JPH0468775B2 - - Google Patents

Info

Publication number
JPH0468775B2
JPH0468775B2 JP57109599A JP10959982A JPH0468775B2 JP H0468775 B2 JPH0468775 B2 JP H0468775B2 JP 57109599 A JP57109599 A JP 57109599A JP 10959982 A JP10959982 A JP 10959982A JP H0468775 B2 JPH0468775 B2 JP H0468775B2
Authority
JP
Japan
Prior art keywords
layer
electron
semiconductor
gaas
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57109599A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59968A (ja
Inventor
Tomonori Ishikawa
Sukehisa Hyamizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57109599A priority Critical patent/JPS59968A/ja
Publication of JPS59968A publication Critical patent/JPS59968A/ja
Publication of JPH0468775B2 publication Critical patent/JPH0468775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57109599A 1982-06-25 1982-06-25 半導体装置 Granted JPS59968A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57109599A JPS59968A (ja) 1982-06-25 1982-06-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57109599A JPS59968A (ja) 1982-06-25 1982-06-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS59968A JPS59968A (ja) 1984-01-06
JPH0468775B2 true JPH0468775B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-11-04

Family

ID=14514355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57109599A Granted JPS59968A (ja) 1982-06-25 1982-06-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS59968A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714054B2 (ja) * 1984-02-10 1995-02-15 株式会社日立製作所 半導体装置
JPH0783107B2 (ja) * 1984-04-19 1995-09-06 日本電気株式会社 電界効果トランジスタ
US4590507A (en) * 1984-07-31 1986-05-20 At&T Bell Laboratories Variable gap devices
JPS62130565A (ja) * 1985-11-30 1987-06-12 Fujitsu Ltd 電界効果型半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147158A (ja) * 1982-02-26 1983-09-01 Oki Electric Ind Co Ltd 化合物半導体電界効果トランジスタ

Also Published As

Publication number Publication date
JPS59968A (ja) 1984-01-06

Similar Documents

Publication Publication Date Title
JP2537852B2 (ja) 高移動度半導体装置
US4758868A (en) Ballistic hetero-junction transistor with transverse two dimensional electron gas layer
JPS60223171A (ja) 電界効果トランジスタ
JPH024140B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR920003799B1 (ko) 반도체 장치
US4980731A (en) Atomic planar-doped field-effect transistor
JPH0468775B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0312769B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH023937A (ja) 電界効果型トランジスタ
JPH0355978B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH06188271A (ja) 電界効果トランジスタ
JP2557373B2 (ja) 化合物半導体装置
JPS59100577A (ja) 半導体装置
JP2703885B2 (ja) 半導体装置
JPH0371774B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH035059B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2541280B2 (ja) 半導体装置
JP2834172B2 (ja) 電界効果トランジスタ
JP3423812B2 (ja) Ｈｅｍｔ素子およびその製造方法
JP2800457B2 (ja) 半導体装置
JPH06151469A (ja) 化合物半導体装置
JP2728765B2 (ja) 化合物半導体電界効果トランジスタ
JPH0797633B2 (ja) 電界効果トランジスタ
JPH07120792B2 (ja) 半導体装置
JPS61248479A (ja) 化合物半導体装置