JPS635360B2 - - Google Patents
Info
- Publication number
- JPS635360B2 JPS635360B2 JP54131316A JP13131679A JPS635360B2 JP S635360 B2 JPS635360 B2 JP S635360B2 JP 54131316 A JP54131316 A JP 54131316A JP 13131679 A JP13131679 A JP 13131679A JP S635360 B2 JPS635360 B2 JP S635360B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- weight
- crystal diameter
- diameter
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13131679A JPS5659692A (en) | 1979-10-13 | 1979-10-13 | Diameter controlling method for single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13131679A JPS5659692A (en) | 1979-10-13 | 1979-10-13 | Diameter controlling method for single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5659692A JPS5659692A (en) | 1981-05-23 |
| JPS635360B2 true JPS635360B2 (enrdf_load_stackoverflow) | 1988-02-03 |
Family
ID=15055095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13131679A Granted JPS5659692A (en) | 1979-10-13 | 1979-10-13 | Diameter controlling method for single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5659692A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6011297A (ja) * | 1983-06-27 | 1985-01-21 | Nippon Telegr & Teleph Corp <Ntt> | 結晶育成制御方法及び制御装置 |
| JPS6065788A (ja) * | 1983-09-21 | 1985-04-15 | Sumitomo Metal Mining Co Ltd | 単結晶の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4846757A (enrdf_load_stackoverflow) * | 1971-10-18 | 1973-07-03 | ||
| JPS5435196B2 (enrdf_load_stackoverflow) * | 1972-12-27 | 1979-10-31 | ||
| DE2446293C2 (de) * | 1974-04-03 | 1986-01-30 | National Research Development Corp., London | Vorrichtung zur Regelung des Stabquerschnitts beim Czochralski-Ziehen |
| JPS5135678A (ja) * | 1974-09-20 | 1976-03-26 | Okura Denki Co Ltd | Juryohochokukeiseigyohoho |
| JPS5912633B2 (ja) * | 1975-04-28 | 1984-03-24 | (株) ビ−イ−イ− | 結昌引上装置における直径偏差検出方法 |
-
1979
- 1979-10-13 JP JP13131679A patent/JPS5659692A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5659692A (en) | 1981-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6776840B1 (en) | Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process | |
| JP5601801B2 (ja) | 単結晶シリコンインゴットの成長方法および成長用装置 | |
| WO2010048790A1 (zh) | 提拉法晶体生长的控制方法 | |
| JPS63242991A (ja) | 結晶径制御方法 | |
| JPH04149092A (ja) | コーン部育成制御方法及び装置 | |
| JPS59102896A (ja) | 単結晶の形状制御方法 | |
| JPS635360B2 (enrdf_load_stackoverflow) | ||
| JP2979462B2 (ja) | 単結晶引き上げ方法 | |
| JP6729257B2 (ja) | 高周波出力の操作方法 | |
| JPH04219388A (ja) | シリコン単結晶の直径制御方法及び装置 | |
| JPH09118585A (ja) | 単結晶引上装置および単結晶の引上方法 | |
| JPH01212291A (ja) | 結晶育成方法および育成装置 | |
| JPH01313385A (ja) | 半導体単結晶の直径制御方法 | |
| JPH078754B2 (ja) | 単結晶の製造方法 | |
| JPS61122187A (ja) | 単結晶引上機 | |
| JP2811826B2 (ja) | 単結晶育成装置および単結晶育成方法 | |
| JPH02275794A (ja) | 単結晶自動育成法 | |
| JPS6330394A (ja) | 単結晶の育成方法 | |
| JPH07513B2 (ja) | 単結晶の育成方法 | |
| JPH0388795A (ja) | 単結晶の製造方法 | |
| WO2023219035A1 (ja) | 酸化物単結晶の製造方法及び製造装置 | |
| JP2025151603A (ja) | 単結晶の育成方法及びその装置 | |
| JPS60246294A (ja) | 単結晶の育成方法 | |
| JPH07514B2 (ja) | 単結晶の育成方法 | |
| JPH01188488A (ja) | 単結晶の育成方法 |