JPS6350857B2 - - Google Patents

Info

Publication number
JPS6350857B2
JPS6350857B2 JP54109956A JP10995679A JPS6350857B2 JP S6350857 B2 JPS6350857 B2 JP S6350857B2 JP 54109956 A JP54109956 A JP 54109956A JP 10995679 A JP10995679 A JP 10995679A JP S6350857 B2 JPS6350857 B2 JP S6350857B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
fuse
insulating film
resistor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54109956A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5633853A (en
Inventor
Masahide Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10995679A priority Critical patent/JPS5633853A/ja
Publication of JPS5633853A publication Critical patent/JPS5633853A/ja
Publication of JPS6350857B2 publication Critical patent/JPS6350857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP10995679A 1979-08-28 1979-08-28 Semiconductor device Granted JPS5633853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10995679A JPS5633853A (en) 1979-08-28 1979-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10995679A JPS5633853A (en) 1979-08-28 1979-08-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5633853A JPS5633853A (en) 1981-04-04
JPS6350857B2 true JPS6350857B2 (enExample) 1988-10-12

Family

ID=14523388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10995679A Granted JPS5633853A (en) 1979-08-28 1979-08-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5633853A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120362A (en) * 1981-01-17 1982-07-27 Toshiba Corp Semiconductor fuse
JPS58123759A (ja) * 1982-01-18 1983-07-23 Fujitsu Ltd 半導体記憶装置
JP4137888B2 (ja) 2003-05-13 2008-08-20 富士通株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
JPS5633853A (en) 1981-04-04

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