JPS6349915B2 - - Google Patents

Info

Publication number
JPS6349915B2
JPS6349915B2 JP57059195A JP5919582A JPS6349915B2 JP S6349915 B2 JPS6349915 B2 JP S6349915B2 JP 57059195 A JP57059195 A JP 57059195A JP 5919582 A JP5919582 A JP 5919582A JP S6349915 B2 JPS6349915 B2 JP S6349915B2
Authority
JP
Japan
Prior art keywords
region
gate
type
source
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57059195A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58175873A (ja
Inventor
Goro Mitarai
Jusuke Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57059195A priority Critical patent/JPS58175873A/ja
Publication of JPS58175873A publication Critical patent/JPS58175873A/ja
Publication of JPS6349915B2 publication Critical patent/JPS6349915B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57059195A 1982-04-07 1982-04-07 半導体集積回路装置 Granted JPS58175873A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57059195A JPS58175873A (ja) 1982-04-07 1982-04-07 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57059195A JPS58175873A (ja) 1982-04-07 1982-04-07 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS58175873A JPS58175873A (ja) 1983-10-15
JPS6349915B2 true JPS6349915B2 (ref) 1988-10-06

Family

ID=13106392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57059195A Granted JPS58175873A (ja) 1982-04-07 1982-04-07 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS58175873A (ref)

Also Published As

Publication number Publication date
JPS58175873A (ja) 1983-10-15

Similar Documents

Publication Publication Date Title
US6503782B2 (en) Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors
US5963409A (en) Input/output electrostatic discharge protection circuit for an integrated circuit (IC)
JP2003008428A (ja) 超低電圧論理回路にバイアスをかけるための装置
US5677550A (en) Integrated circuit devices including insulated-gate transistor device having two separately biasable gates
JPH0715009A (ja) 縦型ｍｏｓ電界効果トランジスタ
JPS62283718A (ja) 論理集積回路装置
JP2002231949A (ja) 半導体装置
JPH06275826A (ja) 半導体装置
JPS6349915B2 (ref)
JP3248791B2 (ja) 半導体装置
JPS6134266B2 (ref)
JPH0328820B2 (ref)
JPH0590515A (ja) 電圧転送回路
KR100244287B1 (ko) 씨모스펫
JPS6085623A (ja) Ｃｍｏｓ集積回路装置
JPS59215766A (ja) Ｍｏｓ集積回路装置
JPH0532908B2 (ref)
JP2000165222A (ja) アナログスイッチ
JPH02226760A (ja) 半導体論理回路
JP3071819B2 (ja) 絶縁ゲート型半導体装置
JPS612355A (ja) 複合半導体素子
JPH0529629A (ja) 電界効果型半導体装置
JPS6028413B2 (ja) 半導体集積回路装置
JPH08250670A (ja) 半導体装置
JPS59130472A (ja) 絶縁ゲ−ト形電界効果トランジスタ