JPS58175873A - 半導体集積回路装置 - Google Patents
半導体集積回路装置Info
- Publication number
- JPS58175873A JPS58175873A JP57059195A JP5919582A JPS58175873A JP S58175873 A JPS58175873 A JP S58175873A JP 57059195 A JP57059195 A JP 57059195A JP 5919582 A JP5919582 A JP 5919582A JP S58175873 A JPS58175873 A JP S58175873A
- Authority
- JP
- Japan
- Prior art keywords
- region
- source
- gate
- type
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059195A JPS58175873A (ja) | 1982-04-07 | 1982-04-07 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059195A JPS58175873A (ja) | 1982-04-07 | 1982-04-07 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175873A true JPS58175873A (ja) | 1983-10-15 |
| JPS6349915B2 JPS6349915B2 (ref) | 1988-10-06 |
Family
ID=13106392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57059195A Granted JPS58175873A (ja) | 1982-04-07 | 1982-04-07 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175873A (ref) |
-
1982
- 1982-04-07 JP JP57059195A patent/JPS58175873A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6349915B2 (ref) | 1988-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4360702B2 (ja) | 半導体装置 | |
| US6930361B2 (en) | Semiconductor device realizing characteristics like a SOI MOSFET | |
| JP2001352077A (ja) | Soi電界効果トランジスタ | |
| JP3456913B2 (ja) | 半導体装置 | |
| KR100585886B1 (ko) | 동적 문턱 전압을 가지는 반도체 회로 | |
| KR960002809A (ko) | Soi기판에 형성한 cmos트랜지스터 및 그 soi기판의 제조방법 | |
| CN101673743A (zh) | 半导体器件 | |
| US20090325352A1 (en) | Methods of forming drain extended transistors | |
| CN1825602B (zh) | 半导体装置 | |
| JPH0653497A (ja) | 入出力保護回路を備えた半導体装置 | |
| JPS58175873A (ja) | 半導体集積回路装置 | |
| JPH06275826A (ja) | 半導体装置 | |
| JP3537431B2 (ja) | 半導体装置 | |
| KR100652071B1 (ko) | 반도체 소자 | |
| US4622571A (en) | CMOS integrated circuit device | |
| JP3248791B2 (ja) | 半導体装置 | |
| KR100244287B1 (ko) | 씨모스펫 | |
| JPS626670B2 (ref) | ||
| KR0127269B1 (ko) | 밴드갭 차이를 이용한 상보형 모스트랜지스터 | |
| JPH01273346A (ja) | 半導体装置 | |
| JPS5963771A (ja) | 半導体装置 | |
| JPS6024593B2 (ja) | 半導体装置 | |
| JPH029459B2 (ref) | ||
| CN116093135A (zh) | 一种易于集成的耗尽型mosfet器件结构 | |
| JPS6146988B2 (ref) |