JPH0328820B2 - - Google Patents

Info

Publication number
JPH0328820B2
JPH0328820B2 JP57175542A JP17554282A JPH0328820B2 JP H0328820 B2 JPH0328820 B2 JP H0328820B2 JP 57175542 A JP57175542 A JP 57175542A JP 17554282 A JP17554282 A JP 17554282A JP H0328820 B2 JPH0328820 B2 JP H0328820B2
Authority
JP
Japan
Prior art keywords
region
gate
conductivity type
fet
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57175542A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5963771A (ja
Inventor
Goro Mitarai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57175542A priority Critical patent/JPS5963771A/ja
Publication of JPS5963771A publication Critical patent/JPS5963771A/ja
Publication of JPH0328820B2 publication Critical patent/JPH0328820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57175542A 1982-10-04 1982-10-04 半導体装置 Granted JPS5963771A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57175542A JPS5963771A (ja) 1982-10-04 1982-10-04 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57175542A JPS5963771A (ja) 1982-10-04 1982-10-04 半導体装置

Publications (2)

Publication Number Publication Date
JPS5963771A JPS5963771A (ja) 1984-04-11
JPH0328820B2 true JPH0328820B2 (ref) 1991-04-22

Family

ID=15997893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57175542A Granted JPS5963771A (ja) 1982-10-04 1982-10-04 半導体装置

Country Status (1)

Country Link
JP (1) JPS5963771A (ref)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174130A (ja) * 1988-12-26 1990-07-05 Nec Corp 電界効果トランジスタの構造

Also Published As

Publication number Publication date
JPS5963771A (ja) 1984-04-11

Similar Documents

Publication Publication Date Title
JP4360702B2 (ja) 半導体装置
EP0036887B1 (en) Semiconductor devices controlled by depletion regions
US5014102A (en) MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
US5357125A (en) Power switching semiconductor device including SI thyristor and MOSFET connected in cascade
US5317175A (en) CMOS device with perpendicular channel current directions
JP3456913B2 (ja) 半導体装置
KR20070091259A (ko) 절연 기판 상에 형성된 전계 효과 트랜지스터
US4651181A (en) Field effect transistors having parallel-connected subtransistors
US5323028A (en) MOS composite static induction thyristor
US7423325B2 (en) Lateral field-effect-controllable semiconductor component for RF applications
KR102767182B1 (ko) 산화물 반도체를 포함하는 cmos 로직 소자
JP3185441B2 (ja) 高周波高出力電界効果トランジスタ
JPH0328820B2 (ref)
US4175240A (en) Integrated logic circuit with a current source made as a field-effect transistor
JPH06275826A (ja) 半導体装置
JP3248791B2 (ja) 半導体装置
JPS6349915B2 (ref)
US8217466B2 (en) High-speed semiconductor device and method for manufacturing the same
JP3300482B2 (ja) 絶縁ゲート付きサイリスタ
JPH0590515A (ja) 電圧転送回路
JP2818416B2 (ja) Mos電界効果トランジスタ
US20050040437A1 (en) Cascaded transistors in one well
JP2867420B2 (ja) 化合物半導体装置
JP2003303834A (ja) 半導体装置
JP2800234B2 (ja) 半導体装置