JPS6349897B2 - - Google Patents

Info

Publication number
JPS6349897B2
JPS6349897B2 JP56088411A JP8841181A JPS6349897B2 JP S6349897 B2 JPS6349897 B2 JP S6349897B2 JP 56088411 A JP56088411 A JP 56088411A JP 8841181 A JP8841181 A JP 8841181A JP S6349897 B2 JPS6349897 B2 JP S6349897B2
Authority
JP
Japan
Prior art keywords
glass
difficult
crystalline
crystallize
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56088411A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57202742A (en
Inventor
Masaru Shinho
Katsujiro Tanzawa
Kazuyoshi Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56088411A priority Critical patent/JPS57202742A/ja
Publication of JPS57202742A publication Critical patent/JPS57202742A/ja
Publication of JPS6349897B2 publication Critical patent/JPS6349897B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP56088411A 1981-06-09 1981-06-09 Glass for semiconductor coating Granted JPS57202742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56088411A JPS57202742A (en) 1981-06-09 1981-06-09 Glass for semiconductor coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56088411A JPS57202742A (en) 1981-06-09 1981-06-09 Glass for semiconductor coating

Publications (2)

Publication Number Publication Date
JPS57202742A JPS57202742A (en) 1982-12-11
JPS6349897B2 true JPS6349897B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-10-06

Family

ID=13942050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56088411A Granted JPS57202742A (en) 1981-06-09 1981-06-09 Glass for semiconductor coating

Country Status (1)

Country Link
JP (1) JPS57202742A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5773327B2 (ja) * 2010-09-01 2015-09-02 日本電気硝子株式会社 半導体被覆用ガラス
JP5655140B2 (ja) * 2011-05-23 2015-01-14 新電元工業株式会社 半導体装置の製造方法及び半導体装置
WO2012160961A1 (ja) * 2011-05-23 2012-11-29 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JP5655139B2 (ja) * 2011-05-23 2015-01-14 新電元工業株式会社 半導体装置の製造方法及び半導体装置
US9159549B2 (en) * 2011-05-26 2015-10-13 Shindengen Electric Manufacturing Co., Ltd. Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
JP6064298B2 (ja) * 2011-08-25 2017-01-25 日本電気硝子株式会社 半導体素子被覆用ガラス
JP5548276B2 (ja) * 2011-08-29 2014-07-16 新電元工業株式会社 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置
CN103403846B (zh) * 2012-01-31 2016-07-06 新电元工业株式会社 半导体接合保护用玻璃复合物、半导体装置的制造方法及半导体装置
WO2013168237A1 (ja) 2012-05-08 2013-11-14 新電元工業株式会社 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置
JP5827397B2 (ja) * 2012-05-08 2015-12-02 新電元工業株式会社 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法
JP5848821B2 (ja) * 2012-05-08 2016-01-27 新電元工業株式会社 半導体接合保護用ガラス組成物、半導体装置の製造方法、半導体装置及び半導体接合保護用ガラス組成物の製造方法
DE112012003178B4 (de) * 2012-05-08 2022-12-08 Shindengen Electric Manufacturing Co., Ltd. Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52134617A (en) * 1976-05-06 1977-11-11 Hitachi Ltd Composite of glass for coating on semiconductor apparatus
JPS5333578A (en) * 1976-09-10 1978-03-29 Hitachi Ltd Glass composition for stabilizing semiconductor element surface

Also Published As

Publication number Publication date
JPS57202742A (en) 1982-12-11

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