JPS6345373A - ケイ素高含有ケイ化タングステンを付着させる方法 - Google Patents

ケイ素高含有ケイ化タングステンを付着させる方法

Info

Publication number
JPS6345373A
JPS6345373A JP62119165A JP11916587A JPS6345373A JP S6345373 A JPS6345373 A JP S6345373A JP 62119165 A JP62119165 A JP 62119165A JP 11916587 A JP11916587 A JP 11916587A JP S6345373 A JPS6345373 A JP S6345373A
Authority
JP
Japan
Prior art keywords
disilane
silane
flow rate
tungsten silicide
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62119165A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0120228B2 (en:Method
Inventor
ジヨセフ・マーチン・ジヤシンスキ
バーナード・ステイール・メイヤソン
ブルース・アルバード・スコツト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS6345373A publication Critical patent/JPS6345373A/ja
Publication of JPH0120228B2 publication Critical patent/JPH0120228B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H10D64/01312—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP62119165A 1986-08-11 1987-05-18 ケイ素高含有ケイ化タングステンを付着させる方法 Granted JPS6345373A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/895,119 US4684542A (en) 1986-08-11 1986-08-11 Low pressure chemical vapor deposition of tungsten silicide
US895119 1997-07-16

Publications (2)

Publication Number Publication Date
JPS6345373A true JPS6345373A (ja) 1988-02-26
JPH0120228B2 JPH0120228B2 (en:Method) 1989-04-14

Family

ID=25404008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62119165A Granted JPS6345373A (ja) 1986-08-11 1987-05-18 ケイ素高含有ケイ化タングステンを付着させる方法

Country Status (4)

Country Link
US (1) US4684542A (en:Method)
EP (1) EP0256337B1 (en:Method)
JP (1) JPS6345373A (en:Method)
DE (1) DE3770540D1 (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63109172A (ja) * 1986-10-27 1988-05-13 バリアン・アソシエイツ・インコ−ポレイテッド メタルシリサイドの低圧化学蒸着
JPH02185973A (ja) * 1989-01-13 1990-07-20 Tokyo Electron Ltd 金属シリサイド膜の形成方法
JP2016211038A (ja) * 2015-05-08 2016-12-15 国立研究開発法人産業技術総合研究所 遷移金属シリサイド膜、その製造方法及び製造装置並びに半導体装置

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2195663B (en) * 1986-08-15 1990-08-22 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor
US5223455A (en) * 1987-07-10 1993-06-29 Kabushiki Kaisha Toshiba Method of forming refractory metal film
US4820377A (en) * 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4837113A (en) * 1987-07-16 1989-06-06 Texas Instruments Incorporated Method for depositing compound from group II-VI
US4830705A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Method for etch of GaAs
US4872938A (en) * 1987-07-16 1989-10-10 Texas Instruments Incorporated Processing apparatus
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
US4855016A (en) * 1987-07-16 1989-08-08 Texas Instruments Incorporated Method for etching aluminum film doped with copper
US4838984A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for etching films of mercury-cadmium-telluride and zinc sulfid
US4857132A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Processing apparatus for wafers
US4867841A (en) * 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
US4849067A (en) * 1987-07-16 1989-07-18 Texas Instruments Incorporated Method for etching tungsten
US4863558A (en) * 1987-07-16 1989-09-05 Texas Instruments Incorporated Method for etching tungsten
US4816098A (en) * 1987-07-16 1989-03-28 Texas Instruments Incorporated Apparatus for transferring workpieces
US4842676A (en) * 1987-07-16 1989-06-27 Texas Instruments Incorporated Process for etch of tungsten
US4855160A (en) * 1987-07-16 1989-08-08 Texas Instruments Incorporated Method for passivating wafer
US4832778A (en) * 1987-07-16 1989-05-23 Texas Instruments Inc. Processing apparatus for wafers
US4838990A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4822450A (en) * 1987-07-16 1989-04-18 Texas Instruments Incorporated Processing apparatus and method
US4832777A (en) * 1987-07-16 1989-05-23 Texas Instruments Incorporated Processing apparatus and method
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus
US4832779A (en) * 1987-07-16 1989-05-23 Texas Instruments Incorporated Processing apparatus
US4830700A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Processing apparatus and method
US4842687A (en) * 1987-07-16 1989-06-27 Texas Instruments Incorporated Method for etching tungsten
US4891488A (en) * 1987-07-16 1990-01-02 Texas Instruments Incorporated Processing apparatus and method
US4828649A (en) * 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
US4842686A (en) * 1987-07-17 1989-06-27 Texas Instruments Incorporated Wafer processing apparatus and method
US4902645A (en) * 1987-08-24 1990-02-20 Fujitsu Limited Method of selectively forming a silicon-containing metal layer
FR2622052B1 (fr) * 1987-10-19 1990-02-16 Air Liquide Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres
US4988533A (en) * 1988-05-27 1991-01-29 Texas Instruments Incorporated Method for deposition of silicon oxide on a wafer
GB2222416B (en) * 1988-08-31 1993-03-03 Watkins Johnson Co Processes using disilane
US5231056A (en) * 1992-01-15 1993-07-27 Micron Technology, Inc. Tungsten silicide (WSix) deposition process for semiconductor manufacture
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
US6090706A (en) * 1993-06-28 2000-07-18 Applied Materials, Inc. Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
JPH07176484A (ja) * 1993-06-28 1995-07-14 Applied Materials Inc 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法
US5482749A (en) * 1993-06-28 1996-01-09 Applied Materials, Inc. Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
KR0161735B1 (ko) * 1995-06-30 1999-02-01 김주용 반도체 소자의 제조방법
US5908659A (en) * 1997-01-03 1999-06-01 Mosel Vitelic Inc. Method for reducing the reflectivity of a silicide layer
US5888588A (en) * 1997-03-31 1999-03-30 Motorola, Inc. Process for forming a semiconductor device
US5958508A (en) * 1997-03-31 1999-09-28 Motorlola, Inc. Process for forming a semiconductor device
US6153519A (en) * 1997-03-31 2000-11-28 Motorola, Inc. Method of forming a barrier layer
US5976941A (en) * 1997-06-06 1999-11-02 The Whitaker Corporation Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates
TW396646B (en) 1997-09-11 2000-07-01 Lg Semicon Co Ltd Manufacturing method of semiconductor devices
KR100425147B1 (ko) * 1997-09-29 2004-05-17 주식회사 하이닉스반도체 반도체소자의제조방법
US5856237A (en) * 1997-10-20 1999-01-05 Industrial Technology Research Institute Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer
EP0935284A1 (en) * 1998-01-29 1999-08-11 Chul-Ju Hwang CVD of silicon containing film using Si2H6
US6210813B1 (en) 1998-09-02 2001-04-03 Micron Technology, Inc. Forming metal silicide resistant to subsequent thermal processing
JP3549188B2 (ja) * 2000-03-27 2004-08-04 日本エー・エス・エム株式会社 半導体基板への薄膜成膜方法
KR101027485B1 (ko) * 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US7026219B2 (en) * 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
DE10134461B4 (de) 2001-07-16 2006-05-18 Infineon Technologies Ag Prozess zur Abscheidung von WSix-Schichten auf hoher Topografie mit definierter Stöchiometrie und dadurch hergestelltes Bauelement
EP1454346B1 (en) * 2001-10-18 2012-01-04 Chul Soo Byun Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US7601225B2 (en) * 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US7294582B2 (en) * 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
JP5005170B2 (ja) * 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7092287B2 (en) * 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
JP2005064284A (ja) * 2003-08-14 2005-03-10 Asm Japan Kk 半導体基板保持装置
US7629270B2 (en) * 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7253084B2 (en) * 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7427571B2 (en) * 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7674726B2 (en) * 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
US7718518B2 (en) * 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
US7553516B2 (en) * 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
JP5280843B2 (ja) * 2006-05-25 2013-09-04 ルネサスエレクトロニクス株式会社 金属化合物層の形成方法、及び金属化合物層の形成装置
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
US7851307B2 (en) * 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
US8343583B2 (en) 2008-07-10 2013-01-01 Asm International N.V. Method for vaporizing non-gaseous precursor in a fluidized bed
US8012876B2 (en) * 2008-12-02 2011-09-06 Asm International N.V. Delivery of vapor precursor from solid source
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
EP2625307B1 (en) 2010-10-05 2017-11-15 Silcotek Corp. Wear resistant article
JP5243519B2 (ja) * 2010-12-22 2013-07-24 東京エレクトロン株式会社 成膜装置
US10876206B2 (en) 2015-09-01 2020-12-29 Silcotek Corp. Thermal chemical vapor deposition coating
US20170211180A1 (en) * 2016-01-22 2017-07-27 Silcotek Corp. Diffusion-rate-limited thermal chemical vapor deposition coating
TWI646670B (zh) * 2017-04-07 2019-01-01 國立交通大學 二維材料的製作方法
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
US11201227B2 (en) * 2018-04-27 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure with barrier layer and method for forming the same
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4218291A (en) * 1978-02-28 1980-08-19 Vlsi Technology Research Association Process for forming metal and metal silicide films
JPS587821A (ja) * 1981-07-06 1983-01-17 Hitachi Ltd 金属とシリコンとの化合物層の形成方法
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide
DE3211752C2 (de) * 1982-03-30 1985-09-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
DE3413064A1 (de) * 1984-04-06 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von metallsilizidschichten durch abscheidung aus der gasphase bei vermindertem druck und deren verwendung
US4568565A (en) * 1984-05-14 1986-02-04 Allied Corporation Light induced chemical vapor deposition of conductive titanium silicide films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63109172A (ja) * 1986-10-27 1988-05-13 バリアン・アソシエイツ・インコ−ポレイテッド メタルシリサイドの低圧化学蒸着
JPH02185973A (ja) * 1989-01-13 1990-07-20 Tokyo Electron Ltd 金属シリサイド膜の形成方法
JP2016211038A (ja) * 2015-05-08 2016-12-15 国立研究開発法人産業技術総合研究所 遷移金属シリサイド膜、その製造方法及び製造装置並びに半導体装置

Also Published As

Publication number Publication date
JPH0120228B2 (en:Method) 1989-04-14
US4684542A (en) 1987-08-04
DE3770540D1 (de) 1991-07-11
EP0256337A1 (en) 1988-02-24
EP0256337B1 (en) 1991-06-05

Similar Documents

Publication Publication Date Title
JPS6345373A (ja) ケイ素高含有ケイ化タングステンを付着させる方法
US10804144B2 (en) Deposition of aluminum oxide etch stop layers
CN108630524B (zh) 氮化硅的选择性生长
CN110402477B (zh) 在氧化硅存在下硅表面上氧化硅或氮化硅的选择性生长
JP3228746B2 (ja) シランを用いないｃｖｄにより窒化チタン上にタングステンを核生成する方法
CN110959186B (zh) 在互连金属化中沉积钌层
EP0704551B1 (en) Method of processing a substrate in a vacuum processing chamber
EP0599991B1 (en) Process for forming low resistivity titanium nitride films
US5906866A (en) Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US20020114886A1 (en) Method of tisin deposition using a chemical vapor deposition process
EP1179838A2 (en) Deposition of tungsten films from W(CO)6
US6933021B2 (en) Method of TiSiN deposition using a chemical vapor deposition (CVD) process
US5672385A (en) Titanium nitride film-MOCVD method incorporating use of tetrakisdialkylaminotitanium as a source gas
JP2002151437A (ja) 化学気相堆積によって形成されたタンタルナイトライド化合物の膜のプラズマ処理
CN115769365A (zh) 改良阻挡性质的钛材料的氮化物覆盖
JP3718297B2 (ja) 薄膜作製方法および薄膜作製装置
JP3527231B2 (ja) 基板処理装置のクリーニング方法
JP2803556B2 (ja) バリアメタル層の形成方法
TWI907356B (zh) 鉬沉積方法
JP2677230B2 (ja) ＴｉＮ膜の形成方法
JPH09306870A (ja) バリア膜の形成方法
JPH03129726A (ja) 半導体装置の製造方法及び化学的気相成長装置