JPS6341223B2 - - Google Patents

Info

Publication number
JPS6341223B2
JPS6341223B2 JP53111717A JP11171778A JPS6341223B2 JP S6341223 B2 JPS6341223 B2 JP S6341223B2 JP 53111717 A JP53111717 A JP 53111717A JP 11171778 A JP11171778 A JP 11171778A JP S6341223 B2 JPS6341223 B2 JP S6341223B2
Authority
JP
Japan
Prior art keywords
gate
voltage
polysilicon
type
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53111717A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5539605A (en
Inventor
Satoshi Meguro
Osamu Yamashiro
Kanji Yo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11171778A priority Critical patent/JPS5539605A/ja
Priority to IN118/CAL/79A priority patent/IN151981B/en
Priority to CH1621/79A priority patent/CH657712A5/de
Priority to FR7904226A priority patent/FR2447036B1/fr
Priority to DE19792906527 priority patent/DE2906527A1/de
Priority to NL7901335A priority patent/NL7901335A/xx
Priority to IT20368/79A priority patent/IT1111987B/it
Priority to CA000321955A priority patent/CA1149081A/en
Priority to DE2954543A priority patent/DE2954543C2/de
Priority to GB8119561A priority patent/GB2100540B/en
Priority to GB8119559A priority patent/GB2081014B/en
Priority to GB7907817A priority patent/GB2016801B/en
Priority to GB8119562A priority patent/GB2081458B/en
Priority to GB8119560A priority patent/GB2081015B/en
Publication of JPS5539605A publication Critical patent/JPS5539605A/ja
Priority to CA000395813A priority patent/CA1143010A/en
Priority to CA000395810A priority patent/CA1154880A/en
Priority to CA000395811A priority patent/CA1145063A/en
Priority to CA000395812A priority patent/CA1146223A/en
Priority to US06/484,351 priority patent/US4559694A/en
Priority to HK80/84A priority patent/HK8084A/xx
Priority to SG417/84A priority patent/SG41784G/en
Priority to SG41684A priority patent/SG41684G/en
Priority to SG41584A priority patent/SG41584G/en
Priority to MY1984375A priority patent/MY8400375A/xx
Priority to CH1928/85A priority patent/CH672391B5/de
Priority to HK364/85A priority patent/HK36485A/xx
Priority to HK351/85A priority patent/HK35185A/xx
Priority to HK363/85A priority patent/HK36385A/xx
Priority to MY658/85A priority patent/MY8500658A/xx
Priority to MY672/85A priority patent/MY8500672A/xx
Priority to MY671/85A priority patent/MY8500671A/xx
Publication of JPS6341223B2 publication Critical patent/JPS6341223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
JP11171778A 1978-03-08 1978-09-13 Reference voltage generation device Granted JPS5539605A (en)

Priority Applications (31)

Application Number Priority Date Filing Date Title
JP11171778A JPS5539605A (en) 1978-09-13 1978-09-13 Reference voltage generation device
IN118/CAL/79A IN151981B (enrdf_load_stackoverflow) 1978-09-13 1979-02-08
CH1621/79A CH657712A5 (de) 1978-03-08 1979-02-19 Referenzspannungserzeuger.
FR7904226A FR2447036B1 (fr) 1978-03-08 1979-02-20 Dispositif generateur de tension de reference
DE19792906527 DE2906527A1 (de) 1978-03-08 1979-02-20 Bezugsspannungsgenerator
NL7901335A NL7901335A (nl) 1978-03-08 1979-02-20 Generator voor een referentiespanning.
IT20368/79A IT1111987B (it) 1978-03-08 1979-02-20 Dispositivo generatore di tensione di riferimento
CA000321955A CA1149081A (en) 1978-03-08 1979-02-20 Reference voltage generator device
DE2954543A DE2954543C2 (enrdf_load_stackoverflow) 1978-03-08 1979-02-20
GB8119561A GB2100540B (en) 1978-03-08 1979-03-06 Reference voltage generators
GB8119559A GB2081014B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB7907817A GB2016801B (en) 1978-03-08 1979-03-06 Referenc voltage generating device
GB8119562A GB2081458B (en) 1978-03-08 1979-03-06 Voltage comparitors
GB8119560A GB2081015B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
CA000395810A CA1154880A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395813A CA1143010A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395812A CA1146223A (en) 1978-03-08 1982-02-08 Battery checker
CA000395811A CA1145063A (en) 1978-03-08 1982-02-08 Reference voltage generator device
US06/484,351 US4559694A (en) 1978-09-13 1983-04-12 Method of manufacturing a reference voltage generator device
HK80/84A HK8084A (en) 1978-03-08 1984-01-24 A battery checker
SG417/84A SG41784G (en) 1978-03-08 1984-06-04 Reference voltage generating device
SG41684A SG41684G (en) 1978-03-08 1984-06-04 Improvements in the manufacture of a semiconductor device
SG41584A SG41584G (en) 1978-03-08 1984-06-04 Reference voltage generating device
MY1984375A MY8400375A (en) 1978-03-08 1984-12-31 A battery checker
CH1928/85A CH672391B5 (de) 1978-03-08 1985-02-19 Referenzspannungserzeuger.
HK363/85A HK36385A (en) 1978-03-08 1985-05-09 Improvements in the manufacture of a semiconductor device
HK364/85A HK36485A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK351/85A HK35185A (en) 1978-03-08 1985-05-09 Reference voltage generating device
MY658/85A MY8500658A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY672/85A MY8500672A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY671/85A MY8500671A (en) 1978-03-08 1985-12-30 Reference voltage generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11171778A JPS5539605A (en) 1978-09-13 1978-09-13 Reference voltage generation device

Publications (2)

Publication Number Publication Date
JPS5539605A JPS5539605A (en) 1980-03-19
JPS6341223B2 true JPS6341223B2 (enrdf_load_stackoverflow) 1988-08-16

Family

ID=14568369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11171778A Granted JPS5539605A (en) 1978-03-08 1978-09-13 Reference voltage generation device

Country Status (1)

Country Link
JP (1) JPS5539605A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0443128U (enrdf_load_stackoverflow) * 1990-08-10 1992-04-13
JPH0714922U (ja) * 1993-08-25 1995-03-14 日本針布株式会社 動物用整毛ブラシ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5431788B2 (enrdf_load_stackoverflow) * 1973-05-02 1979-10-09
US3990891A (en) * 1974-05-24 1976-11-09 Deepsea Ventures, Inc. Halidation of nonferrous metal values in manganese oxide ores
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0443128U (enrdf_load_stackoverflow) * 1990-08-10 1992-04-13
JPH0714922U (ja) * 1993-08-25 1995-03-14 日本針布株式会社 動物用整毛ブラシ

Also Published As

Publication number Publication date
JPS5539605A (en) 1980-03-19

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