JPS6235272B2 - - Google Patents
Info
- Publication number
- JPS6235272B2 JPS6235272B2 JP53035502A JP3550278A JPS6235272B2 JP S6235272 B2 JPS6235272 B2 JP S6235272B2 JP 53035502 A JP53035502 A JP 53035502A JP 3550278 A JP3550278 A JP 3550278A JP S6235272 B2 JPS6235272 B2 JP S6235272B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- voltage
- misfet
- semiconductor
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3550278A JPS54128295A (en) | 1978-03-29 | 1978-03-29 | Mis-type semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3550278A JPS54128295A (en) | 1978-03-29 | 1978-03-29 | Mis-type semiconductor integrated circuit device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59176656A Division JPS60121761A (ja) | 1984-08-27 | 1984-08-27 | Mis型半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54128295A JPS54128295A (en) | 1979-10-04 |
JPS6235272B2 true JPS6235272B2 (enrdf_load_stackoverflow) | 1987-07-31 |
Family
ID=12443523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3550278A Granted JPS54128295A (en) | 1978-03-29 | 1978-03-29 | Mis-type semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54128295A (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4419808A (en) * | 1980-12-15 | 1983-12-13 | Rockwell International Corporation | Method of producing redundant ROM cells |
US4404581A (en) * | 1980-12-15 | 1983-09-13 | Rockwell International Corporation | ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells |
US4455567A (en) * | 1981-11-27 | 1984-06-19 | Hughes Aircraft Company | Polycrystalline semiconductor resistor having a noise reducing field plate |
KR940002772B1 (ko) * | 1984-08-31 | 1994-04-02 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치 및 그 제조방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52122484A (en) * | 1976-04-07 | 1977-10-14 | Hitachi Ltd | Field effect type polisilicon resistance element |
-
1978
- 1978-03-29 JP JP3550278A patent/JPS54128295A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS54128295A (en) | 1979-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5557231A (en) | Semiconductor device with improved substrate bias voltage generating circuit | |
JP3057661B2 (ja) | 半導体装置 | |
US7244991B2 (en) | Semiconductor integrated device | |
US6586807B2 (en) | Semiconductor integrated circuit device | |
US4084108A (en) | Integrated circuit device | |
JPS6050066B2 (ja) | Mos半導体集積回路装置 | |
US4504743A (en) | Semiconductor resistor element | |
JPH0150114B2 (enrdf_load_stackoverflow) | ||
EP0070744B1 (en) | Insulated gate field effect transistor | |
JPS6235272B2 (enrdf_load_stackoverflow) | ||
US4158238A (en) | Stratified charge ram having an opposite dopant polarity MOSFET switching circuit | |
JPS6037623B2 (ja) | 半導体記憶装置 | |
JPH0774312A (ja) | 半導体装置 | |
JPH09266281A (ja) | 昇圧回路 | |
JPS6322069B2 (enrdf_load_stackoverflow) | ||
KR930009810B1 (ko) | 기판바이어스회로를 구비한 반도체장치 | |
JPS60121761A (ja) | Mis型半導体メモリ | |
JPH07302846A (ja) | 半導体メモリ装置 | |
JPH02129960A (ja) | 半導体メモリ | |
JP3216705B2 (ja) | 半導体装置 | |
US6940115B2 (en) | Memory cell having a second transistor for holding a charge value | |
JPS63169113A (ja) | 半導体集積回路 | |
JPS6053470B2 (ja) | 半導体メモリの製造方法 | |
JPS6034821B2 (ja) | 半導体記憶装置 | |
JPH05267617A (ja) | ダイナミックram |