JPS6322069B2 - - Google Patents
Info
- Publication number
- JPS6322069B2 JPS6322069B2 JP54147322A JP14732279A JPS6322069B2 JP S6322069 B2 JPS6322069 B2 JP S6322069B2 JP 54147322 A JP54147322 A JP 54147322A JP 14732279 A JP14732279 A JP 14732279A JP S6322069 B2 JPS6322069 B2 JP S6322069B2
- Authority
- JP
- Japan
- Prior art keywords
- type layer
- film
- layer
- substrate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14732279A JPS5670657A (en) | 1979-11-14 | 1979-11-14 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14732279A JPS5670657A (en) | 1979-11-14 | 1979-11-14 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5670657A JPS5670657A (en) | 1981-06-12 |
JPS6322069B2 true JPS6322069B2 (enrdf_load_stackoverflow) | 1988-05-10 |
Family
ID=15427554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14732279A Granted JPS5670657A (en) | 1979-11-14 | 1979-11-14 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5670657A (enrdf_load_stackoverflow) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56107571A (en) * | 1980-01-30 | 1981-08-26 | Fujitsu Ltd | Semiconductor memory storage device |
JPS602780B2 (ja) * | 1981-12-29 | 1985-01-23 | 富士通株式会社 | 半導体装置 |
JPS5965825A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 液晶表示素子 |
US4903094A (en) * | 1986-08-26 | 1990-02-20 | General Electric Company | Memory cell structure having radiation hardness |
US5734188A (en) * | 1987-09-19 | 1998-03-31 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
US5264712A (en) * | 1989-03-20 | 1993-11-23 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
US5917211A (en) * | 1988-09-19 | 1999-06-29 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5637663A (en) * | 1979-09-05 | 1981-04-11 | Mitsubishi Electric Corp | Capacitor |
-
1979
- 1979-11-14 JP JP14732279A patent/JPS5670657A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5670657A (en) | 1981-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0175378B1 (en) | Dynamic random access memory (dram) | |
CA1222821A (en) | Stacked semiconductor memory | |
US4646118A (en) | Semiconductor memory device | |
JPH01255269A (ja) | 半導体記憶装置 | |
JP3467510B2 (ja) | Dramセル及びその製造方法 | |
JPH03789B2 (enrdf_load_stackoverflow) | ||
US7894255B1 (en) | Thyristor based memory cell | |
JPS6322069B2 (enrdf_load_stackoverflow) | ||
JPS58220464A (ja) | 半導体記憶装置 | |
JPS6056311B2 (ja) | 半導体集積回路 | |
JPS59191374A (ja) | 半導体集積回路装置 | |
JPS5950102B2 (ja) | 半導体メモリ装置 | |
US4060796A (en) | Semiconductor memory device | |
US4152779A (en) | MOS ram cell having improved refresh time | |
JPS61107768A (ja) | 半導体記憶装置 | |
JP2554332B2 (ja) | 1トランジスタ型ダイナミツクメモリセル | |
JPS6115362A (ja) | ダイナミツクramセル | |
JP2515033B2 (ja) | 半導体スタティックメモリ装置の製造方法 | |
JPH01143350A (ja) | 半導体記憶装置 | |
JP2637186B2 (ja) | 半導体装置 | |
JPS61140171A (ja) | 半導体記憶装置 | |
JPS59175157A (ja) | Mis型半導体記憶装置およびその製造方法 | |
JPS6053470B2 (ja) | 半導体メモリの製造方法 | |
JPS60225462A (ja) | 半導体メモリ素子 | |
JPS5928059B2 (ja) | 半導体メモリ |