JPS6339103B2 - - Google Patents

Info

Publication number
JPS6339103B2
JPS6339103B2 JP58066521A JP6652183A JPS6339103B2 JP S6339103 B2 JPS6339103 B2 JP S6339103B2 JP 58066521 A JP58066521 A JP 58066521A JP 6652183 A JP6652183 A JP 6652183A JP S6339103 B2 JPS6339103 B2 JP S6339103B2
Authority
JP
Japan
Prior art keywords
oxide film
element isolation
film
recess
resist material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58066521A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59191351A (ja
Inventor
Yaichiro Watakabe
Takayuki Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58066521A priority Critical patent/JPS59191351A/ja
Publication of JPS59191351A publication Critical patent/JPS59191351A/ja
Publication of JPS6339103B2 publication Critical patent/JPS6339103B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/012—
    • H10W10/014—
    • H10W10/13—
    • H10W10/17—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58066521A 1983-04-13 1983-04-13 半導体装置における素子間分離酸化膜の形成方法 Granted JPS59191351A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58066521A JPS59191351A (ja) 1983-04-13 1983-04-13 半導体装置における素子間分離酸化膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58066521A JPS59191351A (ja) 1983-04-13 1983-04-13 半導体装置における素子間分離酸化膜の形成方法

Publications (2)

Publication Number Publication Date
JPS59191351A JPS59191351A (ja) 1984-10-30
JPS6339103B2 true JPS6339103B2 (index.php) 1988-08-03

Family

ID=13318251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58066521A Granted JPS59191351A (ja) 1983-04-13 1983-04-13 半導体装置における素子間分離酸化膜の形成方法

Country Status (1)

Country Link
JP (1) JPS59191351A (index.php)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945069A (en) * 1988-12-16 1990-07-31 Texas Instruments, Incorporated Organic space holder for trench processing
KR950002951B1 (ko) * 1992-06-18 1995-03-28 현대전자산업 주식회사 트렌치 소자분리막 제조방법

Also Published As

Publication number Publication date
JPS59191351A (ja) 1984-10-30

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