JPH0258778B2 - - Google Patents

Info

Publication number
JPH0258778B2
JPH0258778B2 JP56153242A JP15324281A JPH0258778B2 JP H0258778 B2 JPH0258778 B2 JP H0258778B2 JP 56153242 A JP56153242 A JP 56153242A JP 15324281 A JP15324281 A JP 15324281A JP H0258778 B2 JPH0258778 B2 JP H0258778B2
Authority
JP
Japan
Prior art keywords
silicon
film
forming
nitride film
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56153242A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5854651A (ja
Inventor
Fujiki Tokuyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56153242A priority Critical patent/JPS5854651A/ja
Publication of JPS5854651A publication Critical patent/JPS5854651A/ja
Publication of JPH0258778B2 publication Critical patent/JPH0258778B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0142—
    • H10W10/17—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP56153242A 1981-09-28 1981-09-28 半導体装置の製造方法 Granted JPS5854651A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56153242A JPS5854651A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56153242A JPS5854651A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5854651A JPS5854651A (ja) 1983-03-31
JPH0258778B2 true JPH0258778B2 (index.php) 1990-12-10

Family

ID=15558160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56153242A Granted JPS5854651A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5854651A (index.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0620028A (ja) * 1992-06-29 1994-01-28 Honda Motor Co Ltd 車載用ｅｃｕ装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124141A (ja) * 1982-12-28 1984-07-18 Toshiba Corp 半導体装置の製造方法
US5084413A (en) * 1986-04-15 1992-01-28 Matsushita Electric Industrial Co., Ltd. Method for filling contact hole
US5472903A (en) * 1994-05-24 1995-12-05 United Microelectronics Corp. Isolation technology for sub-micron devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54589A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Burying method of insulator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0620028A (ja) * 1992-06-29 1994-01-28 Honda Motor Co Ltd 車載用ｅｃｕ装置

Also Published As

Publication number Publication date
JPS5854651A (ja) 1983-03-31

Similar Documents

Publication Publication Date Title
US5326715A (en) Method for forming a field oxide film of a semiconductor device
US5512509A (en) Method for forming an isolation layer in a semiconductor device
JPH08293541A (ja) 半導体装置の素子分離方法
US5677232A (en) Methods of fabricating combined field oxide/trench isolation regions
US5061653A (en) Trench isolation process
JPH07105436B2 (ja) 半導体装置の製造方法
JPH0427702B2 (index.php)
JP2896072B2 (ja) 半導体素子のフィールド酸化膜の形成方法
JPH0258778B2 (index.php)
US5696022A (en) Method for forming field oxide isolation film
JPH05849B2 (index.php)
JP2757358B2 (ja) 半導体装置の製造方法
JPH0555361A (ja) 半導体装置及びその製造方法
JPH07111288A (ja) 素子分離の形成方法
JPS6029219B2 (ja) 半導体集積回路の製造方法
JPS61119056A (ja) 半導体装置の製造方法
EP0716442B1 (en) Integrated circuit fabrication utilizing LOCOS process
JP3468920B2 (ja) 半導体装置の素子分離方法
JP3233149B2 (ja) 半導体装置の製法
JP2876612B2 (ja) 半導体装置の製造方法
JPS6322065B2 (index.php)
JPS6222266B2 (index.php)
KR0167260B1 (ko) 반도체 소자의 격리구조 제조방법
JPH0210729A (ja) フィールド絶縁膜の形成方法
JPS6339103B2 (index.php)