JPS6338279A - 半導体レーザ装置の製造方法 - Google Patents

半導体レーザ装置の製造方法

Info

Publication number
JPS6338279A
JPS6338279A JP18379686A JP18379686A JPS6338279A JP S6338279 A JPS6338279 A JP S6338279A JP 18379686 A JP18379686 A JP 18379686A JP 18379686 A JP18379686 A JP 18379686A JP S6338279 A JPS6338279 A JP S6338279A
Authority
JP
Japan
Prior art keywords
layer
etching
groove
wafer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18379686A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530315B2 (enExample
Inventor
Mototaka Tanetani
元隆 種谷
Akihiro Matsumoto
晃広 松本
Kaneki Matsui
完益 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP18379686A priority Critical patent/JPS6338279A/ja
Publication of JPS6338279A publication Critical patent/JPS6338279A/ja
Publication of JPH0530315B2 publication Critical patent/JPH0530315B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Semiconductor Lasers (AREA)
JP18379686A 1986-08-04 1986-08-04 半導体レーザ装置の製造方法 Granted JPS6338279A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18379686A JPS6338279A (ja) 1986-08-04 1986-08-04 半導体レーザ装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18379686A JPS6338279A (ja) 1986-08-04 1986-08-04 半導体レーザ装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6338279A true JPS6338279A (ja) 1988-02-18
JPH0530315B2 JPH0530315B2 (enExample) 1993-05-07

Family

ID=16142070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18379686A Granted JPS6338279A (ja) 1986-08-04 1986-08-04 半導体レーザ装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6338279A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02209782A (ja) * 1989-02-09 1990-08-21 Hikari Keisoku Gijutsu Kaihatsu Kk リッジ導波路の製造方法
EP0619602A3 (en) * 1993-04-07 1995-01-25 Sony Corp Semiconductor device and manufacturing method.
JPH11251686A (ja) * 1998-03-05 1999-09-17 Mitsubishi Electric Corp 変調器付半導体レーザ及びその製造方法
EP1198042A3 (en) * 2000-10-12 2004-04-28 Fuji Photo Film Co., Ltd. Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0649620U (ja) * 1992-04-28 1994-07-08 平尾鉄建株式会社 貫通孔を有する鉄筋コンクリート構造物の補強部材

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60229389A (ja) * 1984-04-26 1985-11-14 Sharp Corp 半導体レ−ザ素子
JPS6113682A (ja) * 1984-06-28 1986-01-21 Nec Corp 半導体レ−ザの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60229389A (ja) * 1984-04-26 1985-11-14 Sharp Corp 半導体レ−ザ素子
JPS6113682A (ja) * 1984-06-28 1986-01-21 Nec Corp 半導体レ−ザの製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02209782A (ja) * 1989-02-09 1990-08-21 Hikari Keisoku Gijutsu Kaihatsu Kk リッジ導波路の製造方法
EP0619602A3 (en) * 1993-04-07 1995-01-25 Sony Corp Semiconductor device and manufacturing method.
US5420446A (en) * 1993-04-07 1995-05-30 Sony Corporation Optoelectronic semiconductor laser device having compound semiconductor first and second layers
US5475237A (en) * 1993-04-07 1995-12-12 Sony Corporation Light emitting device having first and second cladding layers with an active layer and carrier blocking layer therebetween
JPH11251686A (ja) * 1998-03-05 1999-09-17 Mitsubishi Electric Corp 変調器付半導体レーザ及びその製造方法
EP1198042A3 (en) * 2000-10-12 2004-04-28 Fuji Photo Film Co., Ltd. Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
US6888866B2 (en) 2000-10-12 2005-05-03 Fuji Photo Film Co., Ltd. Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof

Also Published As

Publication number Publication date
JPH0530315B2 (enExample) 1993-05-07

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Legal Events

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