JPS6334560B2 - - Google Patents
Info
- Publication number
- JPS6334560B2 JPS6334560B2 JP58200970A JP20097083A JPS6334560B2 JP S6334560 B2 JPS6334560 B2 JP S6334560B2 JP 58200970 A JP58200970 A JP 58200970A JP 20097083 A JP20097083 A JP 20097083A JP S6334560 B2 JPS6334560 B2 JP S6334560B2
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- drain
- channel mos
- channel
- word line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 33
- 239000003990 capacitor Substances 0.000 claims description 17
- 230000000295 complement effect Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 description 23
- 239000012535 impurity Substances 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58200970A JPS59130462A (ja) | 1983-10-28 | 1983-10-28 | 相補型ｍｏｓ半導体メモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58200970A JPS59130462A (ja) | 1983-10-28 | 1983-10-28 | 相補型ｍｏｓ半導体メモリ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12953876A Division JPS5354987A (en) | 1976-10-29 | 1976-10-29 | Complementary type mos semiconductor memory |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60195850A Division JPS6175556A (ja) | 1985-09-06 | 1985-09-06 | 相補型ｍｏｓ半導体メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59130462A JPS59130462A (ja) | 1984-07-27 |
| JPS6334560B2 true JPS6334560B2 (enExample) | 1988-07-11 |
Family
ID=16433344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58200970A Granted JPS59130462A (ja) | 1983-10-28 | 1983-10-28 | 相補型ｍｏｓ半導体メモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59130462A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930010088B1 (ko) * | 1985-04-24 | 1993-10-14 | 가부시기가이샤 히다찌세이꾸쇼 | 반도체 기억장치와 그 제조방법 |
| JPS6211261A (ja) * | 1985-07-08 | 1987-01-20 | Nec Corp | Ｃｍｏｓメモリ装置 |
| JPS62276868A (ja) * | 1986-05-26 | 1987-12-01 | Hitachi Ltd | 半導体集積回路装置 |
| US5196910A (en) * | 1987-04-24 | 1993-03-23 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
| USRE38296E1 (en) * | 1987-04-24 | 2003-11-04 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
| JP2659723B2 (ja) * | 1987-09-19 | 1997-09-30 | 株式会社日立製作所 | 半導体集積回路装置 |
-
1983
- 1983-10-28 JP JP58200970A patent/JPS59130462A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59130462A (ja) | 1984-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4669062A (en) | Two-tiered dynamic random access memory (DRAM) cell | |
| JPH05251661A (ja) | 三重構造を有する半導体メモリー装置 | |
| JPH1116363A (ja) | スタティックｒａｍ | |
| JPH08250673A (ja) | 半導体装置 | |
| JPH0685200A (ja) | ３重ウェル構造を有する半導体装置 | |
| JPS61128557A (ja) | 半導体メモリ装置 | |
| JPH06244385A (ja) | スタティック型半導体記憶装置 | |
| JP2001093989A (ja) | 半導体装置 | |
| JP3039245B2 (ja) | 半導体メモリ装置 | |
| JP2001230329A (ja) | 半導体記憶装置 | |
| JPS60189964A (ja) | 半導体メモリ | |
| JPS6334560B2 (enExample) | ||
| US5404326A (en) | Static random access memory cell structure having a thin film transistor load | |
| JP2976903B2 (ja) | 半導体記憶装置 | |
| JPH09213812A (ja) | Ｄｒａｍセル及びｄｒａｍ | |
| US6088259A (en) | SRAM cell using two single transistor inverters | |
| JP2682393B2 (ja) | スタティック形半導体記憶装置 | |
| JPS6175556A (ja) | 相補型ｍｏｓ半導体メモリ | |
| JP2003078026A (ja) | ダブルゲートｍｏｓトランジスタ構造による高集積メモリ回路 | |
| KR0179818B1 (ko) | 에스램 | |
| JPH0415556B2 (enExample) | ||
| JPH04275455A (ja) | 半導体記憶装置 | |
| JPH0782753B2 (ja) | ダイナミックメモリ装置 | |
| JP2702798B2 (ja) | 半導体記憶装置 | |
| JPH0621395A (ja) | 半導体記憶装置及びその製造方法 |