JPS59130462A - 相補型ｍｏｓ半導体メモリ - Google Patents

相補型ｍｏｓ半導体メモリ

Info

Publication number
JPS59130462A
JPS59130462A JP58200970A JP20097083A JPS59130462A JP S59130462 A JPS59130462 A JP S59130462A JP 58200970 A JP58200970 A JP 58200970A JP 20097083 A JP20097083 A JP 20097083A JP S59130462 A JPS59130462 A JP S59130462A
Authority
JP
Japan
Prior art keywords
channel
complementary
transistor
memory
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58200970A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6334560B2 (enExample
Inventor
Toshiaki Masuhara
増原　利明
Yoshio Sakai
芳男 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58200970A priority Critical patent/JPS59130462A/ja
Publication of JPS59130462A publication Critical patent/JPS59130462A/ja
Publication of JPS6334560B2 publication Critical patent/JPS6334560B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58200970A 1983-10-28 1983-10-28 相補型ｍｏｓ半導体メモリ Granted JPS59130462A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58200970A JPS59130462A (ja) 1983-10-28 1983-10-28 相補型ｍｏｓ半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58200970A JPS59130462A (ja) 1983-10-28 1983-10-28 相補型ｍｏｓ半導体メモリ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12953876A Division JPS5354987A (en) 1976-10-29 1976-10-29 Complementary type mos semiconductor memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60195850A Division JPS6175556A (ja) 1985-09-06 1985-09-06 相補型ｍｏｓ半導体メモリ

Publications (2)

Publication Number Publication Date
JPS59130462A true JPS59130462A (ja) 1984-07-27
JPS6334560B2 JPS6334560B2 (enExample) 1988-07-11

Family

ID=16433344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58200970A Granted JPS59130462A (ja) 1983-10-28 1983-10-28 相補型ｍｏｓ半導体メモリ

Country Status (1)

Country Link
JP (1) JPS59130462A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6211261A (ja) * 1985-07-08 1987-01-20 Nec Corp Ｃｍｏｓメモリ装置
JPS62276868A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd 半導体集積回路装置
JPS6480066A (en) * 1987-09-19 1989-03-24 Hitachi Ltd Semiconductor integrated circuit device
US4873559A (en) * 1985-04-24 1989-10-10 Hitachi, Ltd. Semiconductor memory device and a process for producing the same
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873559A (en) * 1985-04-24 1989-10-10 Hitachi, Ltd. Semiconductor memory device and a process for producing the same
US5079181A (en) * 1985-04-24 1992-01-07 Hitachi, Ltd. Process for producing semiconductor memory device
JPS6211261A (ja) * 1985-07-08 1987-01-20 Nec Corp Ｃｍｏｓメモリ装置
JPS62276868A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd 半導体集積回路装置
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region
JPS6480066A (en) * 1987-09-19 1989-03-24 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS6334560B2 (enExample) 1988-07-11

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