JPS6331110B2 - - Google Patents

Info

Publication number
JPS6331110B2
JPS6331110B2 JP57107450A JP10745082A JPS6331110B2 JP S6331110 B2 JPS6331110 B2 JP S6331110B2 JP 57107450 A JP57107450 A JP 57107450A JP 10745082 A JP10745082 A JP 10745082A JP S6331110 B2 JPS6331110 B2 JP S6331110B2
Authority
JP
Japan
Prior art keywords
collector
region
conductivity type
opposite conductivity
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57107450A
Other languages
English (en)
Japanese (ja)
Other versions
JPS589370A (ja
Inventor
Tokio Furuhashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57107450A priority Critical patent/JPS589370A/ja
Publication of JPS589370A publication Critical patent/JPS589370A/ja
Publication of JPS6331110B2 publication Critical patent/JPS6331110B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP57107450A 1982-06-21 1982-06-21 横方向トランジスタ Granted JPS589370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57107450A JPS589370A (ja) 1982-06-21 1982-06-21 横方向トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57107450A JPS589370A (ja) 1982-06-21 1982-06-21 横方向トランジスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3991273A Division JPS5629386B2 (en:Method) 1973-04-07 1973-04-07

Publications (2)

Publication Number Publication Date
JPS589370A JPS589370A (ja) 1983-01-19
JPS6331110B2 true JPS6331110B2 (en:Method) 1988-06-22

Family

ID=14459460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57107450A Granted JPS589370A (ja) 1982-06-21 1982-06-21 横方向トランジスタ

Country Status (1)

Country Link
JP (1) JPS589370A (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0656848B2 (ja) * 1983-05-30 1994-07-27 三洋電機株式会社 ラテラル型トランジスタ
JPH0654777B2 (ja) * 1985-02-12 1994-07-20 キヤノン株式会社 ラテラルトランジスタを有する回路
US5508551A (en) * 1994-03-02 1996-04-16 Harris Corporation Current mirror with saturation limiting

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991777A (en:Method) * 1973-01-05 1974-09-02
JPS49124981A (en:Method) * 1973-04-02 1974-11-29

Also Published As

Publication number Publication date
JPS589370A (ja) 1983-01-19

Similar Documents

Publication Publication Date Title
US5079602A (en) Insulated gate bipolar transistor
KR100208632B1 (ko) 반도체 집적 회로 및 그 제조 방법
JP2800827B2 (ja) 光半導体装置およびその製造方法
JPH02275675A (ja) Ｍｏｓ型半導体装置
US4543593A (en) Semiconductor protective device
JPH0793383B2 (ja) 半導体装置
US4288807A (en) Darlington circuit having an improved diode drain
JP3186405B2 (ja) 横型ｍｏｓｆｅｔ
JPH049378B2 (en:Method)
JPS6331110B2 (en:Method)
JPH1117198A (ja) 集積ｍｏｓパワー・トランジスタを含むコンポーネントのロジック・ウエルの保護
US3684933A (en) Semiconductor device showing at least three successive zones of alternate opposite conductivity type
JP3144585B2 (ja) 半導体装置
JPS62177968A (ja) ゲ−トタ−ンオフサイリスタ
JPS6359262B2 (en:Method)
JP3206149B2 (ja) 絶縁ゲートバイポーラトランジスタ
US5581096A (en) Integrated semiconductor device having a thyristor
EP0202038B1 (en) Bipolar transistor
JP2901275B2 (ja) 半導体集積回路装置
JPH0456465B2 (en:Method)
US6624502B2 (en) Method and device for limiting the substrate potential in junction isolated integrated circuits
JP2502696B2 (ja) 半導体集積回路装置
JP2525142B2 (ja) 半導体集積回路
JPS6116569A (ja) 半導体集積回路装置
JPH0750783B2 (ja) 静電保護回路