JPS63306674A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63306674A JPS63306674A JP14214987A JP14214987A JPS63306674A JP S63306674 A JPS63306674 A JP S63306674A JP 14214987 A JP14214987 A JP 14214987A JP 14214987 A JP14214987 A JP 14214987A JP S63306674 A JPS63306674 A JP S63306674A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- insulating film
- etching
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000005530 etching Methods 0.000 claims abstract description 19
- 238000005468 ion implantation Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 2
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000001459 lithography Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14214987A JPS63306674A (ja) | 1987-06-09 | 1987-06-09 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14214987A JPS63306674A (ja) | 1987-06-09 | 1987-06-09 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63306674A true JPS63306674A (ja) | 1988-12-14 |
| JPH0332217B2 JPH0332217B2 (enrdf_load_stackoverflow) | 1991-05-10 |
Family
ID=15308503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14214987A Granted JPS63306674A (ja) | 1987-06-09 | 1987-06-09 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63306674A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5172200A (en) * | 1990-01-12 | 1992-12-15 | Mitsubishi Denki Kabushiki Kaisha | MOS memory device having a LDD structure and a visor-like insulating layer |
-
1987
- 1987-06-09 JP JP14214987A patent/JPS63306674A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5172200A (en) * | 1990-01-12 | 1992-12-15 | Mitsubishi Denki Kabushiki Kaisha | MOS memory device having a LDD structure and a visor-like insulating layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0332217B2 (enrdf_load_stackoverflow) | 1991-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5950567A (ja) | 電界効果トランジスタの製造方法 | |
| JPS6182482A (ja) | ＧａＡｓ電界効果トランジスタの製造方法 | |
| JPS59229876A (ja) | シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法 | |
| JPH022142A (ja) | 電界効果トランジスタ及びその製造方法 | |
| JP2553699B2 (ja) | 半導体装置の製造方法 | |
| JPS6292481A (ja) | 半導体装置の製造方法 | |
| JPS63306674A (ja) | 半導体装置の製造方法 | |
| JP3141656B2 (ja) | 薄膜半導体装置の製造方法 | |
| JPS622666A (ja) | 電界効果トランジスタ | |
| JPS60165764A (ja) | 化合物半導体装置の製造方法 | |
| JPH0793318B2 (ja) | 半導体装置の製造方法 | |
| JP3032458B2 (ja) | 電界効果トランジスタの製造方法 | |
| JPH01161873A (ja) | 半導体装置の製造方法 | |
| JPS61216487A (ja) | 半導体装置の製造方法 | |
| JP3373676B2 (ja) | 電界効果トランジスタ素子の製造方法 | |
| JPS6260268A (ja) | 電界効果トランジスタの製造方法 | |
| JPH02271540A (ja) | 電界効果トランジスタの製造方法 | |
| JPS6260269A (ja) | 電界効果トランジスタの製造方法 | |
| JPS6272175A (ja) | 半導体装置の製造方法 | |
| JPH0439772B2 (enrdf_load_stackoverflow) | ||
| JPH01251670A (ja) | 電界効果トランジスタの製造方法 | |
| JPH02191344A (ja) | 電界効果トランジスタの製造方法 | |
| JPH0219622B2 (enrdf_load_stackoverflow) | ||
| JPS59193070A (ja) | シヨツトキゲ−ト電界効果トランジスタの製造方法 | |
| JPS61280672A (ja) | 化合物半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |