JPS63282195A - エピタキシャル成長装置の原料ガス吹出ノズル - Google Patents
エピタキシャル成長装置の原料ガス吹出ノズルInfo
- Publication number
- JPS63282195A JPS63282195A JP11672887A JP11672887A JPS63282195A JP S63282195 A JPS63282195 A JP S63282195A JP 11672887 A JP11672887 A JP 11672887A JP 11672887 A JP11672887 A JP 11672887A JP S63282195 A JPS63282195 A JP S63282195A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- quartz
- nozzle
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 title abstract 3
- 239000007924 injection Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000010453 quartz Substances 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000012808 vapor phase Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims description 24
- 238000007664 blowing Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000002159 abnormal effect Effects 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000000407 epitaxy Methods 0.000 abstract 1
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 238000000927 vapour-phase epitaxy Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 44
- 239000007789 gas Substances 0.000 description 35
- 235000012239 silicon dioxide Nutrition 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 239000002245 particle Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 150000003377 silicon compounds Chemical group 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11672887A JPS63282195A (ja) | 1987-05-15 | 1987-05-15 | エピタキシャル成長装置の原料ガス吹出ノズル |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11672887A JPS63282195A (ja) | 1987-05-15 | 1987-05-15 | エピタキシャル成長装置の原料ガス吹出ノズル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63282195A true JPS63282195A (ja) | 1988-11-18 |
| JPH0458436B2 JPH0458436B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-09-17 |
Family
ID=14694327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11672887A Granted JPS63282195A (ja) | 1987-05-15 | 1987-05-15 | エピタキシャル成長装置の原料ガス吹出ノズル |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63282195A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000182967A (ja) * | 1998-12-15 | 2000-06-30 | Sony Corp | 気相成長方法および気相成長装置 |
-
1987
- 1987-05-15 JP JP11672887A patent/JPS63282195A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000182967A (ja) * | 1998-12-15 | 2000-06-30 | Sony Corp | 気相成長方法および気相成長装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0458436B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-09-17 |
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