JPH0345957Y2 - - Google Patents

Info

Publication number

JPH0345957Y2

JPH0345957Y2 JP16522287U JP16522287U JPH0345957Y2 JP H0345957 Y2 JPH0345957 Y2 JP H0345957Y2 JP 16522287 U JP16522287 U JP 16522287U JP 16522287 U JP16522287 U JP 16522287U JP H0345957 Y2 JPH0345957 Y2 JP H0345957Y2

Authority

JP

Japan

Prior art keywords

vapor phase

reaction vessel

substrate support

phase growth

reaction

Prior art date

1987-10-28

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

• Espacenet
• Global Dossier
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• 238000006243 chemical reaction Methods 0.000 claims description 58
• 239000000758 substrate Substances 0.000 claims description 30
• 238000001947 vapour-phase growth Methods 0.000 claims description 28
• 238000000034 method Methods 0.000 claims description 23
• 239000002994 raw material Substances 0.000 claims description 20
• 238000010438 heat treatment Methods 0.000 claims description 19
• 239000007789 gas Substances 0.000 claims description 16
• 239000007795 chemical reaction product Substances 0.000 claims description 13
• 239000004065 semiconductor Substances 0.000 claims description 10
• 239000012495 reaction gas Substances 0.000 claims description 9
• 150000001875 compounds Chemical class 0.000 claims description 7
• 230000004308 accommodation Effects 0.000 claims description 3
• JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 31
• 229910001218 Gallium arsenide Inorganic materials 0.000 description 30
• 235000012431 wafers Nutrition 0.000 description 28
• 238000003860 storage Methods 0.000 description 14
• 238000001556 precipitation Methods 0.000 description 12
• UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
• 239000001257 hydrogen Substances 0.000 description 10
• 229910052739 hydrogen Inorganic materials 0.000 description 10
• VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 8
• 238000004140 cleaning Methods 0.000 description 8
• VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 7
• 229910000041 hydrogen chloride Inorganic materials 0.000 description 7
• IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 7
• GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
• XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 6
• 229910052733 gallium Inorganic materials 0.000 description 6
• 238000009825 accumulation Methods 0.000 description 5
• 230000007547 defect Effects 0.000 description 5
• 230000000694 effects Effects 0.000 description 5
• 150000004678 hydrides Chemical class 0.000 description 5
• 230000002411 adverse Effects 0.000 description 4
• 239000012159 carrier gas Substances 0.000 description 4
• 238000009826 distribution Methods 0.000 description 4
• 239000002244 precipitate Substances 0.000 description 4
• 239000010453 quartz Substances 0.000 description 4
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
• 238000011109 contamination Methods 0.000 description 3
• 238000000151 deposition Methods 0.000 description 3
• 230000032258 transport Effects 0.000 description 3
• 239000012808 vapor phase Substances 0.000 description 3
• IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
• OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
• QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
• 239000013078 crystal Substances 0.000 description 2
• 230000008021 deposition Effects 0.000 description 2
• 238000005530 etching Methods 0.000 description 2
• 238000002474 experimental method Methods 0.000 description 2
• 229910002804 graphite Inorganic materials 0.000 description 2
• 239000010439 graphite Substances 0.000 description 2
• 239000012535 impurity Substances 0.000 description 2
• 238000004519 manufacturing process Methods 0.000 description 2
• 230000001376 precipitating effect Effects 0.000 description 2
• 239000000376 reactant Substances 0.000 description 2
• 241000764773 Inna Species 0.000 description 1
• 229910052785 arsenic Inorganic materials 0.000 description 1
• RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
• OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 239000011248 coating agent Substances 0.000 description 1
• 238000000576 coating method Methods 0.000 description 1
• 238000005260 corrosion Methods 0.000 description 1
• 230000007797 corrosion Effects 0.000 description 1
• 235000012489 doughnuts Nutrition 0.000 description 1
• 150000004820 halides Chemical class 0.000 description 1
• 230000006698 induction Effects 0.000 description 1
• 229910052757 nitrogen Inorganic materials 0.000 description 1
• 230000003647 oxidation Effects 0.000 description 1
• 238000007254 oxidation reaction Methods 0.000 description 1
• 230000002093 peripheral effect Effects 0.000 description 1
• 230000005855 radiation Effects 0.000 description 1
• 238000006722 reduction reaction Methods 0.000 description 1
• 238000007788 roughening Methods 0.000 description 1
• HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
• 229910010271 silicon carbide Inorganic materials 0.000 description 1
• 230000003746 surface roughness Effects 0.000 description 1
• 238000005979 thermal decomposition reaction Methods 0.000 description 1

Cited By (1)