JPS6324617A - ウエハの両面露光法 - Google Patents
ウエハの両面露光法Info
- Publication number
- JPS6324617A JPS6324617A JP61168925A JP16892586A JPS6324617A JP S6324617 A JPS6324617 A JP S6324617A JP 61168925 A JP61168925 A JP 61168925A JP 16892586 A JP16892586 A JP 16892586A JP S6324617 A JPS6324617 A JP S6324617A
- Authority
- JP
- Japan
- Prior art keywords
- double sided
- wafer
- silicon wafer
- sided exposure
- windows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract 2
- 239000003550 marker Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 hydrazine ethylenediamine pyrocatechol Chemical compound 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61168925A JPS6324617A (ja) | 1986-07-17 | 1986-07-17 | ウエハの両面露光法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61168925A JPS6324617A (ja) | 1986-07-17 | 1986-07-17 | ウエハの両面露光法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6324617A true JPS6324617A (ja) | 1988-02-02 |
JPH0262939B2 JPH0262939B2 (enrdf_load_stackoverflow) | 1990-12-27 |
Family
ID=15877089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61168925A Granted JPS6324617A (ja) | 1986-07-17 | 1986-07-17 | ウエハの両面露光法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6324617A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6049040A (ja) * | 1983-08-29 | 1985-03-18 | Japan Styrene Paper Co Ltd | ポリプロピレン系樹脂発泡粒子 |
JP2012080004A (ja) * | 2010-10-05 | 2012-04-19 | Nikon Corp | 露光装置、デバイス製造方法及び基板 |
US9627191B2 (en) | 2009-09-17 | 2017-04-18 | Wagic, Inc. | Extendable multi-tool including interchangable light bulb changer and accessories |
US9679760B2 (en) | 2002-08-12 | 2017-06-13 | Wagic, Inc. | Customizable light bulb changer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52152172A (en) * | 1976-06-14 | 1977-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Working method of mask alignment mark holes |
JPS53127266A (en) * | 1977-04-13 | 1978-11-07 | Fujitsu Ltd | Forming method of marker |
JPS5459083A (en) * | 1977-10-19 | 1979-05-12 | Sumitomo Electric Ind Ltd | Double-sided pattern forming method for semiconductor wafer |
-
1986
- 1986-07-17 JP JP61168925A patent/JPS6324617A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52152172A (en) * | 1976-06-14 | 1977-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Working method of mask alignment mark holes |
JPS53127266A (en) * | 1977-04-13 | 1978-11-07 | Fujitsu Ltd | Forming method of marker |
JPS5459083A (en) * | 1977-10-19 | 1979-05-12 | Sumitomo Electric Ind Ltd | Double-sided pattern forming method for semiconductor wafer |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6049040A (ja) * | 1983-08-29 | 1985-03-18 | Japan Styrene Paper Co Ltd | ポリプロピレン系樹脂発泡粒子 |
US9679760B2 (en) | 2002-08-12 | 2017-06-13 | Wagic, Inc. | Customizable light bulb changer |
US9627191B2 (en) | 2009-09-17 | 2017-04-18 | Wagic, Inc. | Extendable multi-tool including interchangable light bulb changer and accessories |
US10371360B2 (en) | 2009-09-17 | 2019-08-06 | Wagic, Inc. | Extendable multi-tool including interchangable light bulb changer and accessories |
JP2012080004A (ja) * | 2010-10-05 | 2012-04-19 | Nikon Corp | 露光装置、デバイス製造方法及び基板 |
Also Published As
Publication number | Publication date |
---|---|
JPH0262939B2 (enrdf_load_stackoverflow) | 1990-12-27 |
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