JPS6322463B2 - - Google Patents

Info

Publication number
JPS6322463B2
JPS6322463B2 JP56061069A JP6106981A JPS6322463B2 JP S6322463 B2 JPS6322463 B2 JP S6322463B2 JP 56061069 A JP56061069 A JP 56061069A JP 6106981 A JP6106981 A JP 6106981A JP S6322463 B2 JPS6322463 B2 JP S6322463B2
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
silicon
diffusion layer
type diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56061069A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57176742A (en
Inventor
Manabu Henmi
Kohei Ebara
Susumu Muramoto
Seitaro Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56061069A priority Critical patent/JPS57176742A/ja
Priority to US06/369,235 priority patent/US4564997A/en
Priority to CA000401294A priority patent/CA1204883A/en
Priority to DE8282302044T priority patent/DE3271995D1/de
Priority to EP82302044A priority patent/EP0063917B1/en
Publication of JPS57176742A publication Critical patent/JPS57176742A/ja
Publication of JPS6322463B2 publication Critical patent/JPS6322463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP56061069A 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof Granted JPS57176742A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56061069A JPS57176742A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof
US06/369,235 US4564997A (en) 1981-04-21 1982-04-16 Semiconductor device and manufacturing process thereof
CA000401294A CA1204883A (en) 1981-04-21 1982-04-20 Semiconductor device and manufacturing process thereof
DE8282302044T DE3271995D1 (en) 1981-04-21 1982-04-21 Method of manufacturing a semiconductor device
EP82302044A EP0063917B1 (en) 1981-04-21 1982-04-21 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56061069A JPS57176742A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57176742A JPS57176742A (en) 1982-10-30
JPS6322463B2 true JPS6322463B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-05-12

Family

ID=13160481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56061069A Granted JPS57176742A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57176742A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123266A (ja) * 1982-12-28 1984-07-17 Toshiba Corp Ｍｉｓトランジスタ及びその製造方法
JPS59178773A (ja) * 1983-03-30 1984-10-11 Toshiba Corp 半導体装置の製造方法
JPH065680B2 (ja) * 1984-09-03 1994-01-19 富士通株式会社 半導体装置の製法
JPS6184866A (ja) * 1984-10-02 1986-04-30 Nec Corp 半導体集積回路装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396766A (en) * 1977-02-04 1978-08-24 Nec Corp Semiconductor device
JPS54591A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Element isolating method
JPS55130140A (en) * 1979-03-30 1980-10-08 Toshiba Corp Fabricating method of semiconductor device

Also Published As

Publication number Publication date
JPS57176742A (en) 1982-10-30

Similar Documents

Publication Publication Date Title
US4543592A (en) Semiconductor integrated circuits and manufacturing process thereof
US4502913A (en) Total dielectric isolation for integrated circuits
US4757028A (en) Process for preparing a silicon carbide device
JP2780986B2 (ja) 集積回路の製造方法
KR0171582B1 (ko) 배선 구조를 갖는 반도체 디바이스 및 그 제조 방법
EP0444836B1 (en) Process for forming semiconductor device isolation regions
JPH0362024B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP0540446B1 (en) Self-aligned contact studs for semiconductor structures
EP0076105B1 (en) Method of producing a bipolar transistor
JP2002512736A (ja) トレンチで分離されたバイポーラデバイス
JPS6072268A (ja) バイポ−ラ・トランジスタ構造の製造方法
KR100437451B1 (ko) 트랩형 비휘발성 메모리 장치의 제조 방법
US4661832A (en) Total dielectric isolation for integrated circuits
US5897359A (en) Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor
JPS61501668A (ja) 集積回路構成要素の電気的絶縁領域製造方法
JPS6322463B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4980739A (en) Self-aligned bipolar transistor using selective polysilicon growth
JP3483090B2 (ja) 半導体装置の製造方法
JPH05226466A (ja) 半導体装置の製造方法
JP2969722B2 (ja) 半導体集積回路装置及びその製造方法
KR0172546B1 (ko) 반도체 소자의 저장전극 콘택홀 형성방법
KR100416813B1 (ko) 반도체소자의필드산화막형성방법
JPS58108753A (ja) 半導体装置の製造方法
TW465035B (en) Manufacture method of extremely narrow bit line without sidewall spacer
JPS6021539A (ja) 半導体装置の製造方法