JPS57176742A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57176742A
JPS57176742A JP56061069A JP6106981A JPS57176742A JP S57176742 A JPS57176742 A JP S57176742A JP 56061069 A JP56061069 A JP 56061069A JP 6106981 A JP6106981 A JP 6106981A JP S57176742 A JPS57176742 A JP S57176742A
Authority
JP
Japan
Prior art keywords
photoresist
silicon
stepwise
accumulated
plasma deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56061069A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322463B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Manabu Henmi
Kohei Ebara
Susumu Muramoto
Seitaro Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56061069A priority Critical patent/JPS57176742A/ja
Priority to US06/369,235 priority patent/US4564997A/en
Priority to CA000401294A priority patent/CA1204883A/en
Priority to DE8282302044T priority patent/DE3271995D1/de
Priority to EP82302044A priority patent/EP0063917B1/en
Publication of JPS57176742A publication Critical patent/JPS57176742A/ja
Publication of JPS6322463B2 publication Critical patent/JPS6322463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP56061069A 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof Granted JPS57176742A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56061069A JPS57176742A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof
US06/369,235 US4564997A (en) 1981-04-21 1982-04-16 Semiconductor device and manufacturing process thereof
CA000401294A CA1204883A (en) 1981-04-21 1982-04-20 Semiconductor device and manufacturing process thereof
DE8282302044T DE3271995D1 (en) 1981-04-21 1982-04-21 Method of manufacturing a semiconductor device
EP82302044A EP0063917B1 (en) 1981-04-21 1982-04-21 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56061069A JPS57176742A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57176742A true JPS57176742A (en) 1982-10-30
JPS6322463B2 JPS6322463B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-05-12

Family

ID=13160481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56061069A Granted JPS57176742A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57176742A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123266A (ja) * 1982-12-28 1984-07-17 Toshiba Corp Ｍｉｓトランジスタ及びその製造方法
JPS59178773A (ja) * 1983-03-30 1984-10-11 Toshiba Corp 半導体装置の製造方法
JPS6161466A (ja) * 1984-09-03 1986-03-29 Fujitsu Ltd 半導体装置の製法
JPS6184866A (ja) * 1984-10-02 1986-04-30 Nec Corp 半導体集積回路装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396766A (en) * 1977-02-04 1978-08-24 Nec Corp Semiconductor device
JPS54591A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Element isolating method
JPS55130140A (en) * 1979-03-30 1980-10-08 Toshiba Corp Fabricating method of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396766A (en) * 1977-02-04 1978-08-24 Nec Corp Semiconductor device
JPS54591A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Element isolating method
JPS55130140A (en) * 1979-03-30 1980-10-08 Toshiba Corp Fabricating method of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123266A (ja) * 1982-12-28 1984-07-17 Toshiba Corp Ｍｉｓトランジスタ及びその製造方法
JPS59178773A (ja) * 1983-03-30 1984-10-11 Toshiba Corp 半導体装置の製造方法
JPS6161466A (ja) * 1984-09-03 1986-03-29 Fujitsu Ltd 半導体装置の製法
JPS6184866A (ja) * 1984-10-02 1986-04-30 Nec Corp 半導体集積回路装置

Also Published As

Publication number Publication date
JPS6322463B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-05-12

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