JPS63204620A - ハイブリッド厚膜回路におけるボンデイングワイヤとコンタクト領域との間の接続形成方法 - Google Patents

ハイブリッド厚膜回路におけるボンデイングワイヤとコンタクト領域との間の接続形成方法

Info

Publication number
JPS63204620A
JPS63204620A JP63029994A JP2999488A JPS63204620A JP S63204620 A JPS63204620 A JP S63204620A JP 63029994 A JP63029994 A JP 63029994A JP 2999488 A JP2999488 A JP 2999488A JP S63204620 A JPS63204620 A JP S63204620A
Authority
JP
Japan
Prior art keywords
bonding wire
wire
barrier layer
contact region
thick film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63029994A
Other languages
English (en)
Inventor
トミスラフ・オクスタイナー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Germany
BBC Brown Boveri France SA
Original Assignee
Brown Boveri und Cie AG Germany
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brown Boveri und Cie AG Germany, BBC Brown Boveri France SA filed Critical Brown Boveri und Cie AG Germany
Publication of JPS63204620A publication Critical patent/JPS63204620A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［産業上の利用分野］ この発明は、ハイブリッド厚膜回路におけるボンディン
グワイヤとコンタクト領域との間の接続形成方法に関す
る。この発明は、材料技術の分野におけるものであり、
また、電子回路の製造に適用されるものである。
［従来の技術］ 電子部品は、通常コンパクトな形状に組立てられる。部
品をコンタクト領域に組立てるという目的のために、例
えば、薄膜又は厚膜技術が利用される。薄膜回路の場合
は、キャリヤの上に薄い層が蒸着（スパッタ）される。
厚膜回路の場合は、ペーストを用い、これを高温で焼成
する。
ハイブリッド厚膜回路に用いられる部品（半導体チップ
、コンデンサ等）は、回路レイアウトに従って相互に接
続されなければならない。部品相互の接続は、はんだ付
は又は溶接（専門用語：ボンディング）のいずれかによ
りなされる。このボンディング工程においては、チップ
が、例えば、金のペーストからなる導体トラックにボン
ディングワイヤ（アルミニウム、金）を介して接続され
なければならない。ボンディング工程において、所謂カ
ーケンダール効果の結果として金属間化合物相の脆化（
欠乏）が生じるため、高温では問題が生じる。
［発明が解決しようとする課題］ アルミニウムワイヤを導体トラック（金からなる）に接
続する場合に、１５０℃よりも高い８度域では、金属接
続部が機械的にも電気的にも十分に固着されなくなると
いう制御できない物理的影響が生じる。この望ましくな
い腐蝕効果（高温で金属が相互に拡散し合う）は、高温
状態の下でハイブリッド回路を使用する場合に生じて、
結果として回路全体の完全な故障を生じる。この腐蝕効
果は他の材料を用いることにより遅らせることができる
が、防止することはできない。
長年にわたり、ハイブリッド回路における接続部の腐蝕
問題を解決するために種々の提案がなされている。今ま
での文献に記載された手段は、全て半導体サイドを複雑
な層構造にすることにより上記問題の解決を試みている
。特に、米国特許３゜５８５．４６１及び米国特許４，
１７６．４４３は、このような半導体チップの製造に無
視できない程の費用がかかることを明らかにしている。
このような半導体チップの製造プラントを供給すること
は、膨大な数の製品の販売が確実な場合にのみ価値があ
る。
しかしながら、高価な製造プラントの供給は、単一の製
品又は品目数が少ない製品の場合には価値がない。また
、ここにおいても、接続部に腐蝕に対する保護を与えな
ければならない。
この発明は、かかる事情に鑑みてなされたものであって
、高価な半導体サイドから廉価な基板導体トラックのワ
イヤのサイドに腐蝕に対する保護処理を移行して、少量
生産に適したハイブリッド厚膜回路におけるボンディン
グワイヤとコンタクト領域との間の接続形成方法を提供
することを目的とする。
［課題を解決するための手段および作用］この発明によ
れば、上記目的は請求項１記載のものにより達成される
。改善及び更に有利な展開は従属項から明らかにされる
。
この発明によれば、腐蝕問題を解決するにあたり、半導
体サイドには従来のメタライゼーションの技術が用いら
れる一方、基板導体トラックに対する接続、すなわち、
チップから導体トラックへの接続の場合には、新規で簡
潔な材料エンジニアリング手法を用いている。この発明
による方法が少２製品について初めて経済的な道を開く
ことになる。障壁層で被覆されたボンディングワイヤを
使用することにより、半導体チップの上に拡散障壁層を
設けるという複雑な製法を避けることができる。
［実施例コ 約２００℃の温度で生じるハイブリッド回路の欠陥は、
所謂金属間化合物相（Ｉｎｔｅｒｍｅｔａｌ　ｌ　１ｃ
ｐｈａｓ−ａｓ）が形成されることによるものである。
特に、金ワイヤを使用する場合に、この金属間化合物相
の腐蝕が半導体サイドに存在する。すなわち、金ワイヤ
の接触点及びアルミニウムからなるチップの接触点にて
腐蝕が存在する。アルミニウムワイヤを使用する場合は
、金属間化合物相が基板サイドに生じる。
この発明の実施例においては、アルミニウムワイヤと基
板サイドの金の導体トラックとを用いる。
勿論、アルミニウムからなるチップ上の接触点と金ワイ
ヤとの場合にも同様の腐蝕が起こる。
Ｔ５１ａ図に、チップ及び導体トラックを含む簡単なハ
イブリッド構造部分を示す。キャリヤ材料はセラミック
基板１の形態をとる。この基板１の上には導体トラック
２が設けられると共に、半導体チップ３の設置ポイント
が設けられている。導体トラック２は金からなり、チッ
プ３の接触点はアルミニウムからなる。第１ｃ図によれ
ば、ポンディグワイヤとしてのアルミニウムワイヤ７は
、チップ３及び導体トラック２の間を接続するものであ
る。゛チップ３及び導体トラック２の両者が、接続用の
コンタクト領域を形成している。
第１ａ図に示すようＥ、１マスク４は、導体トラック２
を介して基板１の上に配設されている。このマスク４は
、鉄ニツケル合金（例えば、アンバー）からなり、アル
ミニウムワイヤ７が導体トラック２に後に接続されるべ
きポイントに、孔４ａが形成されている。
物理的・化学的な金属蒸着の工程（図示せず）において
、前記マスク４は、第１ａ図に示〜すような薄膜技術に
よる蒸着を受け、導体金属層（例えば、ニッケル又はチ
タン）はマスク４の孔４ａを通して導体トラック２の上
に形成される（第１ｂ図参照）。この蒸着された金属層
は、導体トラック２の金と接続用ワイヤ７のアルミニウ
ムとの間の拡散障壁層５として作用する。なお、第１ｂ
図ではマスク４を省略した。
ボンディングワイヤ７と導体トラック２との電気的接続
を良好にするために、ワイヤ７の材料と同等又は類似の
性質を有する金属層６を、更に拡散障壁層５の上に蒸着
して形成する（第１ｂ図参照）。この場合に、追加の金
属層６はアルミニウムからなる。このとき、超音波溶接
によりボンディングワイヤ７と蒸着アルミニウムからな
る金属層６との間の信頼性ある接続を得ることができる
（第１Ｃ図参照）。
上記第１の実施例によれば、蒸着された金属層５が、導
体トラック２と接続用ワイヤ７との間において拡散障壁
として作用する。この蒸着金属は、導体トラック又は接
続用ワイヤに使用される金属に依存する。導体トラック
が金からなる場合は、例えばニッケル又はチタンを蒸着
する。また、導体トラックが銀又はパラジウムからなる
場合は、他の拡散障壁層を蒸着する。一般に、この方法
の場合には、コンタクト用ポイントを薄膜技術により蒸
着すると共に、拡散障壁層を上記方法で蒸着することに
より、ハイブリッド厚膜回路が腐蝕から保護される。
更に第２の実施例として、第２ａ図及び第２ｂ図に示す
ように、導体トラックにアルミニウムワイヤをボンディ
ングする方法がある。
このボンディングは、通常、超音波溶接法によりなされ
る。この場合に、拡散溶接プロセスは、素早いラビング
（運動周波数二層波数が数キロヘルツ）と、これら条件
下で生じる摩擦エネルギの結果として接続が形成される
ということによって開始される。
第２ａ図に示すように、接続用ワイヤ８が、超音波溶接
機（図示せず）にクランプされ、接触を形成するために
導体トラック２のところに取付けられて−いる。この図
において、第１ａ図乃至第１Ｃ図の部材に類似する部材
は同じ符号で示されている。この場合においても、導体
トラック２は金からなり、接続用ワイヤ８はアルミニウ
ムからなる。
この第２の実施例によれば、接続用ワイヤ８の全体が更
にニッケル層９で被覆されている（第２ｂ図参照）。ワ
イヤに更に金属層を被せる方法については周知のことで
あり、ここではその詳細な説明を省略する。このような
タイプのワイヤは、例えば、スパッタリング、ＣＶＤ若
しくは電気めっきにより製造される。
第２ａ図によれば、特別につくられたアルミニウムワイ
ヤ８．９が、溶接機により導体トラック２に重ねられて
矢印の方向に移動される。この工程において、ワイヤ外
装のニッケル層９は導体トラック２の金の表面に擦られ
て表面内部に拡散障壁層５が形成される。かくして、超
音波溶接法の結果として、接続用ワイヤ８のアルミニウ
ムと導体トラック２とは拡散障壁層５を介して親密な接
続を形成する。つまり、超音波接合工程において、ワイ
ヤ全表面を覆う被ｆｆ１（金属層）９としてボンディン
グワイヤ８の上に拡散障壁層が直接形成され、その後の
溶接工程にて導体トラック２に拡散する。
この第２の実施例の方法は、マスクを使用する第１の実
施例の方法に比べて簡易、迅速かつ低コストである。し
かしながら、両方法とも、実際のはんだ付は又は溶接工
程の前に拡散障壁層を用いる点で共通する。この障壁層
が、金属ニッケル、クロム−ニッケル合金若しくは金属
チタンのうちのいずれかであることが好ましい。
この方法の個々の工程を再度簡単に説明する。
第１ａ図乃至第１Ｃ図に示すマスク方法（第１の実施例
）においては、はっきりした輪郭に切抜かれたマスクを
導体トラック２の上面に載置する。
次いで、マスクを金属蒸着に供して金属障壁層を形成す
る。次に、ボンディングワイヤと同等又は類似の機能を
有する追加の接続用金属層６の蒸着をマスクに対してお
こなう。最後に、ボンディングワイヤ７を接続用金属層
６に溶接すると、結果として導体トラック２にワイヤ７
が接続される。
第２ａ図及び第２ｂ図に示す方法（第２の実施例）にお
いては、既に蒸着されたボンディングワイヤ８を使用す
る。ボンディングワイヤの超音波溶接中に、ボンディン
グワイヤ８の蒸着金属層９を導体トラック２内に拡散さ
せ、障壁層５を形成する。ボンディングワイヤ８と導体
トラック２との間の溶接工程を引続き行なう。
［発明の効果］ この発明の方法によれば、ハイブリッド回路の欠陥率を
大幅に低減することができる。従来の回路は、温度調整
がうまくいかないためにかなりの制限を受けており、多
くの場合（２００℃を超える温度）において、全く使用
することができなかった。これに対して、この発明の新
規な方法を用いた結果、長寿命、高品質、かつ低欠陥率
の製品を製造することができる。
【図面の簡単な説明】
第１ａ図乃至第１ｃ図はこの発明の第１の実施例として
のマスクを使用する方法を説明するための図、 第２ａ図及び第２ｂ図はこの発明の第２の実施例として
の特殊ポンディグワイヤを使用する方法について説明す
るための図である。 １；基板、２；導体トラック、３：半導体チップ、４；
マスク、４ａ；孔、５；拡散障壁層、６；金属層、７；
ボンディングワイヤ、８；アルミニウムワイヤ、９；ニ
ッケル被覆層。

Claims (1)

  1. 【特許請求の範囲】 １、ハイブリッド厚膜回路におけるボンディングワイヤ
    とコンタクト領域との間の接続形成方法であつて、ボン
    ディングワイヤ（７、８）をコンタクト領域（２）に接
    続する前に、接続部の腐蝕を防止する金属拡散障壁層（
    ５）を形成することを特徴とする方法。 ２、金属拡散障壁層（５）を、コンタクト領域（２）の
    上に金属層を物理的・化学的に蒸着することによって形
    成することを特徴とする請求項１記載の方法。 ３、金属拡散障壁層（５）を、その全表面が障壁層（９
    ）で包囲されたボンディングワイヤ（８）を溶接するこ
    とによって形成することを特徴とする請求項１記載の方
    法。 ４、物理的・化学的な金属蒸着が、コンタクト領域（４
    ａ）においてパターン化されたマスク（４）を通してな
    され、その後、更に、マスク（４）を介してボンディン
    グワイヤ（７）と同等又は類似の特性を有する金属層（
    ６）で覆うことを特徴とする請求項２記載の方法。
JP63029994A 1987-02-11 1988-02-10 ハイブリッド厚膜回路におけるボンデイングワイヤとコンタクト領域との間の接続形成方法 Pending JPS63204620A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19873704200 DE3704200A1 (de) 1987-02-11 1987-02-11 Verfahren zur herstellung einer verbindung zwischen einem bonddraht und einer kontaktflaeche bei hybriden dickschicht-schaltkreisen
DE3704200.9 1987-02-11

Publications (1)

Publication Number Publication Date
JPS63204620A true JPS63204620A (ja) 1988-08-24

Family

ID=6320738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63029994A Pending JPS63204620A (ja) 1987-02-11 1988-02-10 ハイブリッド厚膜回路におけるボンデイングワイヤとコンタクト領域との間の接続形成方法

Country Status (3)

Country Link
EP (1) EP0278413A3 (ja)
JP (1) JPS63204620A (ja)
DE (1) DE3704200A1 (ja)

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US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
EP0792517B1 (en) * 1994-11-15 2003-10-22 Formfactor, Inc. Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US20100065963A1 (en) 1995-05-26 2010-03-18 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
DE10205609A1 (de) * 2002-02-11 2003-08-28 Infineon Technologies Ag Anordnung zum Drahtbonden und Verfahren zur Herstellung einer Bondverbindung

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JPS6016463A (ja) * 1983-07-08 1985-01-28 Agency Of Ind Science & Technol オ−ム性電極
JPS6097655A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd ボンデイング用ワイヤ
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JPS5778145A (en) * 1980-10-31 1982-05-15 Toshiba Corp Forming method for bonding pad of semiconductor chip
JPS6016463A (ja) * 1983-07-08 1985-01-28 Agency Of Ind Science & Technol オ−ム性電極
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JPS61256766A (ja) * 1985-05-10 1986-11-14 Hitachi Ltd 化合物半導体用電極

Also Published As

Publication number Publication date
EP0278413A3 (de) 1989-03-29
DE3704200C2 (ja) 1991-11-28
DE3704200A1 (de) 1988-08-25
EP0278413A2 (de) 1988-08-17

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