JPS63158853A - 多層配線形成法 - Google Patents
多層配線形成法Info
- Publication number
- JPS63158853A JPS63158853A JP31198087A JP31198087A JPS63158853A JP S63158853 A JPS63158853 A JP S63158853A JP 31198087 A JP31198087 A JP 31198087A JP 31198087 A JP31198087 A JP 31198087A JP S63158853 A JPS63158853 A JP S63158853A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- film
- sog
- glass layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000011521 glass Substances 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- 150000004767 nitrides Chemical class 0.000 abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 3
- 239000011574 phosphorus Substances 0.000 abstract description 3
- 238000004528 spin coating Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000007493 shaping process Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 24
- 230000008021 deposition Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 210000004709 eyebrow Anatomy 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31198087A JPS63158853A (ja) | 1987-12-11 | 1987-12-11 | 多層配線形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31198087A JPS63158853A (ja) | 1987-12-11 | 1987-12-11 | 多層配線形成法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10912379A Division JPS5633899A (en) | 1979-08-29 | 1979-08-29 | Method of forming multilayer wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63158853A true JPS63158853A (ja) | 1988-07-01 |
| JPH0121626B2 JPH0121626B2 (enrdf_load_stackoverflow) | 1989-04-21 |
Family
ID=18023753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31198087A Granted JPS63158853A (ja) | 1987-12-11 | 1987-12-11 | 多層配線形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63158853A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313044B1 (en) | 1998-10-29 | 2001-11-06 | Hyundai Electronics Industries Co., Ltd. | Methods for forming a spin-on-glass layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133575A (en) * | 1974-09-17 | 1976-03-22 | Nippon Telegraph & Telephone | Tasohaisenkozo |
| JPS5214365A (en) * | 1975-07-25 | 1977-02-03 | Hitachi Ltd | Process for formation of insulating membrane by spreading |
-
1987
- 1987-12-11 JP JP31198087A patent/JPS63158853A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133575A (en) * | 1974-09-17 | 1976-03-22 | Nippon Telegraph & Telephone | Tasohaisenkozo |
| JPS5214365A (en) * | 1975-07-25 | 1977-02-03 | Hitachi Ltd | Process for formation of insulating membrane by spreading |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313044B1 (en) | 1998-10-29 | 2001-11-06 | Hyundai Electronics Industries Co., Ltd. | Methods for forming a spin-on-glass layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0121626B2 (enrdf_load_stackoverflow) | 1989-04-21 |
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