JPS63131152U - - Google Patents

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Publication number
JPS63131152U
JPS63131152U JP2316587U JP2316587U JPS63131152U JP S63131152 U JPS63131152 U JP S63131152U JP 2316587 U JP2316587 U JP 2316587U JP 2316587 U JP2316587 U JP 2316587U JP S63131152 U JPS63131152 U JP S63131152U
Authority
JP
Japan
Prior art keywords
element isolation
isolation region
diffusion layer
type diffusion
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2316587U
Other languages
English (en)
Other versions
JPH0525232Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2316587U priority Critical patent/JPH0525232Y2/ja
Publication of JPS63131152U publication Critical patent/JPS63131152U/ja
Application granted granted Critical
Publication of JPH0525232Y2 publication Critical patent/JPH0525232Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】
第１図ａおよびｂはそれぞれ本考案の一実施例
を示す部分平面図および断面図、第２図ａおよび
ｂは従来の代表的なバイポーラ型半導体装置の部
分平面図および断面図である。 １……Ｐ型シリコン基板、２……Ｎ＋埋入層、
３……Ｎ−エピタキシヤル層からなるコレクタ領
域、４……Ｐ型ベース領域、５……Ｐ＋拡散層か
らなる素子分離領域、６……フイールド絶縁膜、
７，１２……コンタクト孔、９……第１層配線の
ベース引出配線、１０……スルー・ホール、１１
……第２層配線のベース引出配線、１３……フイ
ールド・プレート電極、１４……層間絶縁膜。

Claims (1)

    【実用新案登録請求の範囲】
  1. 高濃度のＰ型拡散層を素子分離領域とし、ベー
    ス領域と外部端子とを接続するベース引出配線が
    前記Ｐ型拡散層の素子分離領域上を横切る布線構
    造を備えるＮＰＮバイポーラ・トランジスタを含
    む半導体装置において、前記Ｐ型拡散層の素子分
    離領域とベース領域との間のフイールド絶縁膜上
    の素子分離領域とコンタクト孔を介して電気接続
    されるフイールド・プレート電極が延在して設け
    られることを特徴とする半導体装置。
JP2316587U 1987-02-18 1987-02-18 Expired - Lifetime JPH0525232Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2316587U JPH0525232Y2 (ja) 1987-02-18 1987-02-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2316587U JPH0525232Y2 (ja) 1987-02-18 1987-02-18

Publications (2)

Publication Number Publication Date
JPS63131152U true JPS63131152U (ja) 1988-08-26
JPH0525232Y2 JPH0525232Y2 (ja) 1993-06-25

Family

ID=30821214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2316587U Expired - Lifetime JPH0525232Y2 (ja) 1987-02-18 1987-02-18

Country Status (1)

Country Link
JP (1) JPH0525232Y2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248078A (ja) * 1989-03-22 1990-10-03 Fuji Electric Co Ltd 高耐圧素子を含む半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248078A (ja) * 1989-03-22 1990-10-03 Fuji Electric Co Ltd 高耐圧素子を含む半導体装置

Also Published As

Publication number Publication date
JPH0525232Y2 (ja) 1993-06-25

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