JPS6429837U - - Google Patents
Info
- Publication number
- JPS6429837U JPS6429837U JP12420187U JP12420187U JPS6429837U JP S6429837 U JPS6429837 U JP S6429837U JP 12420187 U JP12420187 U JP 12420187U JP 12420187 U JP12420187 U JP 12420187U JP S6429837 U JPS6429837 U JP S6429837U
- Authority
- JP
- Japan
- Prior art keywords
- opening
- contact hole
- diffusion region
- contact
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図は本考案の一実施例の構成説明図、第２
図は本考案の一実施例の製造工程図、第３図は本
考案の他の実施例の構成説明図、第４図は本考案
の他の実施例の製造工程図、第５図は本考案にお
けるコンタクト形成例を示す。 １……半導体基板、２……ロコス酸化膜、３…
…ｎ型拡散領域、４……層間絶縁膜、５……コン
タクト孔、５……ｎ型拡散領域、３７……ＳＯＧ
、３８……埋め込み層、７，３９……Ａｌ配線層
。
図は本考案の一実施例の製造工程図、第３図は本
考案の他の実施例の構成説明図、第４図は本考案
の他の実施例の製造工程図、第５図は本考案にお
けるコンタクト形成例を示す。 １……半導体基板、２……ロコス酸化膜、３…
…ｎ型拡散領域、４……層間絶縁膜、５……コン
タクト孔、５……ｎ型拡散領域、３７……ＳＯＧ
、３８……埋め込み層、７，３９……Ａｌ配線層
。
Claims (1)
- 層間絶縁膜に形成したコンタクト孔に対応して
半導体基板中に形成した開孔部と、該開孔部に沿
つて形成した拡散領域を有し、該開孔部を含むコ
ンタクト孔に設けた導体によつて構成されたコン
タクトを有することを特徴とする半導体装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12420187U JPS6429837U (ja) | 1987-08-13 | 1987-08-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12420187U JPS6429837U (ja) | 1987-08-13 | 1987-08-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6429837U true JPS6429837U (ja) | 1989-02-22 |
Family
ID=31373725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12420187U Pending JPS6429837U (ja) | 1987-08-13 | 1987-08-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6429837U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7276323B2 (en) | 1998-09-23 | 2007-10-02 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60148147A (ja) * | 1984-01-13 | 1985-08-05 | Nec Corp | 半導体装置 |
| JPS63219160A (ja) * | 1987-03-06 | 1988-09-12 | Nec Corp | 半導体素子及びその製造方法 |
-
1987
- 1987-08-13 JP JP12420187U patent/JPS6429837U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60148147A (ja) * | 1984-01-13 | 1985-08-05 | Nec Corp | 半導体装置 |
| JPS63219160A (ja) * | 1987-03-06 | 1988-09-12 | Nec Corp | 半導体素子及びその製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7276323B2 (en) | 1998-09-23 | 2007-10-02 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |