JPS6312381B2 - - Google Patents

Info

Publication number
JPS6312381B2
JPS6312381B2 JP56100651A JP10065181A JPS6312381B2 JP S6312381 B2 JPS6312381 B2 JP S6312381B2 JP 56100651 A JP56100651 A JP 56100651A JP 10065181 A JP10065181 A JP 10065181A JP S6312381 B2 JPS6312381 B2 JP S6312381B2
Authority
JP
Japan
Prior art keywords
layer
etching
insulating
oxide film
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56100651A
Other languages
English (en)
Japanese (ja)
Other versions
JPS583244A (ja
Inventor
Hiroshi Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56100651A priority Critical patent/JPS583244A/ja
Publication of JPS583244A publication Critical patent/JPS583244A/ja
Publication of JPS6312381B2 publication Critical patent/JPS6312381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/011—
    • H10W10/10—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP56100651A 1981-06-30 1981-06-30 半導体装置の製造方法 Granted JPS583244A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56100651A JPS583244A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56100651A JPS583244A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS583244A JPS583244A (ja) 1983-01-10
JPS6312381B2 true JPS6312381B2 (index.php) 1988-03-18

Family

ID=14279719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56100651A Granted JPS583244A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS583244A (index.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081488A (ja) * 1983-10-13 1985-05-09 Honda Motor Co Ltd ポンプ装置
JP2525001Y2 (ja) * 1991-04-30 1997-02-05 株式会社ニフコ 軸間スペーサ
JP2572371Y2 (ja) * 1992-05-13 1998-05-20 日本エフ・テイ・ビー株式会社 スポンジローラ

Also Published As

Publication number Publication date
JPS583244A (ja) 1983-01-10

Similar Documents

Publication Publication Date Title
JP2955459B2 (ja) 半導体装置の製造方法
US4523976A (en) Method for forming semiconductor devices
JP3024317B2 (ja) 半導体装置の製造方法
US5667632A (en) Method of defining a line width
JPS58210634A (ja) 半導体装置の製造方法
JPH0427702B2 (index.php)
JPH1145874A (ja) 半導体装置の製造方法
JP2896072B2 (ja) 半導体素子のフィールド酸化膜の形成方法
JPS6312381B2 (index.php)
JPH07326621A (ja) 半導体素子の微細パターン形成方法
JP2722518B2 (ja) 半導体装置の製造方法
JPH0555361A (ja) 半導体装置及びその製造方法
JPH05110099A (ja) 薄膜トランジスタの製造方法
JP3190144B2 (ja) 半導体集積回路の製造方法
JP2597424B2 (ja) 半導体装置の製造方法
JP3059749B2 (ja) 半導体装置の製造方法
JPH01307242A (ja) 半導体装置の製造方法
JPH0327521A (ja) Ｍｏｓ型トランジスタの製造方法
JP2671359B2 (ja) 半導体装置の製造方法
JPH11297813A (ja) 半導体装置及びその製造方法
JPH0547921A (ja) 半導体装置の製造方法
JP2504239B2 (ja) 半導体装置の製造方法
JPH0427703B2 (index.php)
JPH0481329B2 (index.php)
JPH0330300B2 (index.php)