JPS6310894B2 - - Google Patents
Info
- Publication number
- JPS6310894B2 JPS6310894B2 JP4143581A JP4143581A JPS6310894B2 JP S6310894 B2 JPS6310894 B2 JP S6310894B2 JP 4143581 A JP4143581 A JP 4143581A JP 4143581 A JP4143581 A JP 4143581A JP S6310894 B2 JPS6310894 B2 JP S6310894B2
- Authority
- JP
- Japan
- Prior art keywords
- nickel
- layer
- nickel layer
- sputtering
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 239000011574 phosphorus Substances 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract description 30
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 238000005245 sintering Methods 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 3
- 239000002344 surface layer Substances 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
- G11B20/10—Digital recording or reproducing
- G11B20/18—Error detection or correction; Testing, e.g. of drop-outs
- G11B20/1806—Pulse code modulation systems for audio signals
- G11B20/1809—Pulse code modulation systems for audio signals by interleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4143581A JPS57154845A (en) | 1981-03-19 | 1981-03-19 | Forming method for rear face electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4143581A JPS57154845A (en) | 1981-03-19 | 1981-03-19 | Forming method for rear face electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57154845A JPS57154845A (en) | 1982-09-24 |
JPS6310894B2 true JPS6310894B2 (enrdf_load_stackoverflow) | 1988-03-10 |
Family
ID=12608286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4143581A Granted JPS57154845A (en) | 1981-03-19 | 1981-03-19 | Forming method for rear face electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57154845A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0280435U (enrdf_load_stackoverflow) * | 1988-12-12 | 1990-06-21 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02163971A (ja) * | 1988-12-16 | 1990-06-25 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
-
1981
- 1981-03-19 JP JP4143581A patent/JPS57154845A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0280435U (enrdf_load_stackoverflow) * | 1988-12-12 | 1990-06-21 |
Also Published As
Publication number | Publication date |
---|---|
JPS57154845A (en) | 1982-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3144328B2 (ja) | 熱電変換素子およびその製造方法 | |
JPS60196937A (ja) | 半導体素子およびその製造法 | |
JPS6190445A (ja) | 半導体装置 | |
JPS6310894B2 (enrdf_load_stackoverflow) | ||
JPS56142633A (en) | Forming method for back electrode of semiconductor wafer | |
JPH05235387A (ja) | 太陽電池の製造方法 | |
JPS59213145A (ja) | 半導体装置及びその製造方法 | |
US3746944A (en) | Contact members for silicon semiconductor devices | |
US3840982A (en) | Contacts for semiconductor devices, particularly integrated circuits, and methods of making the same | |
US4871617A (en) | Ohmic contacts and interconnects to silicon and method of making same | |
JPS58191478A (ja) | 太陽電池の反射防止膜形成法 | |
JPH05291186A (ja) | 半導体チップの表面上に金属コンタクトを形成する方法 | |
JP2918914B2 (ja) | 半導体装置及びその製造方法 | |
JPH0224030B2 (enrdf_load_stackoverflow) | ||
JP2724490B2 (ja) | ゲートターンオフサイリスタの製造方法 | |
JPH0682630B2 (ja) | 半導体素子の多層電極の製造方法 | |
JPH08227743A (ja) | 酸化物超電導体用金属電極 | |
JPS5856459A (ja) | 半導体装置の製造方法 | |
JPS5928073B2 (ja) | 半導体装置用電極の形成方法 | |
JPH03153033A (ja) | 半導体装置の製造方法 | |
JPH05304292A (ja) | 半導体装置の製造方法 | |
JPS59194482A (ja) | トンネル接合型ジヨセフソン素子 | |
JPS5987860A (ja) | 高周波トランジスタ | |
JPS5847851B2 (ja) | チタン層を有する半導体素子の製造方法 | |
JPS62235730A (ja) | 半導体装置の製造方法 |