JPS6288318A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6288318A
JPS6288318A JP60229382A JP22938285A JPS6288318A JP S6288318 A JPS6288318 A JP S6288318A JP 60229382 A JP60229382 A JP 60229382A JP 22938285 A JP22938285 A JP 22938285A JP S6288318 A JPS6288318 A JP S6288318A
Authority
JP
Japan
Prior art keywords
layer
growth
plane
gaas
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60229382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0473610B2 (enExample
Inventor
Toshiro Hayakawa
利郎 早川
Naohiro Suyama
尚宏 須山
Masafumi Kondo
雅文 近藤
Kousei Takahashi
向星 高橋
Saburo Yamamoto
三郎 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60229382A priority Critical patent/JPS6288318A/ja
Priority to GB8706194A priority patent/GB2202371B/en
Priority to DE19873709134 priority patent/DE3709134A1/de
Publication of JPS6288318A publication Critical patent/JPS6288318A/ja
Publication of JPH0473610B2 publication Critical patent/JPH0473610B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02398—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP60229382A 1985-10-14 1985-10-14 半導体装置の製造方法 Granted JPS6288318A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60229382A JPS6288318A (ja) 1985-10-14 1985-10-14 半導体装置の製造方法
GB8706194A GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device
DE19873709134 DE3709134A1 (de) 1985-10-14 1987-03-20 Halbleiterbauelement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60229382A JPS6288318A (ja) 1985-10-14 1985-10-14 半導体装置の製造方法
GB8706194A GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6288318A true JPS6288318A (ja) 1987-04-22
JPH0473610B2 JPH0473610B2 (enExample) 1992-11-24

Family

ID=39345493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60229382A Granted JPS6288318A (ja) 1985-10-14 1985-10-14 半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JPS6288318A (enExample)
DE (1) DE3709134A1 (enExample)
GB (1) GB2202371B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431410A (en) * 1987-07-27 1989-02-01 Sharp Kk Semiconductor device
JPH01128423A (ja) * 1987-11-12 1989-05-22 Sharp Corp 半導体装置
JPH01154513A (ja) * 1987-12-11 1989-06-16 Sony Corp エピタキシャル成長法
US5647917A (en) * 1994-09-08 1997-07-15 Sumitomo Electric Industries, Ltd. Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth
JP2013117228A (ja) * 2011-12-02 2013-06-13 Bosch Mahle Turbo Systems Gmbh & Co Kg 過給装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039515A (ja) * 1989-06-07 1991-01-17 Sharp Corp 半導体装置
CN100453690C (zh) * 2006-07-21 2009-01-21 哈尔滨工业大学 GaAs基InSb薄膜的分子束外延生长方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
EP0214610B1 (en) * 1985-09-03 1990-12-05 Daido Tokushuko Kabushiki Kaisha Epitaxial gallium arsenide semiconductor wafer and method of producing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431410A (en) * 1987-07-27 1989-02-01 Sharp Kk Semiconductor device
JPH01128423A (ja) * 1987-11-12 1989-05-22 Sharp Corp 半導体装置
JPH01154513A (ja) * 1987-12-11 1989-06-16 Sony Corp エピタキシャル成長法
US5647917A (en) * 1994-09-08 1997-07-15 Sumitomo Electric Industries, Ltd. Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth
JP2013117228A (ja) * 2011-12-02 2013-06-13 Bosch Mahle Turbo Systems Gmbh & Co Kg 過給装置

Also Published As

Publication number Publication date
JPH0473610B2 (enExample) 1992-11-24
GB2202371B (en) 1991-03-20
DE3709134A1 (de) 1988-09-29
GB2202371A (en) 1988-09-21
GB8706194D0 (en) 1987-04-23

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