DE3709134A1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE3709134A1
DE3709134A1 DE19873709134 DE3709134A DE3709134A1 DE 3709134 A1 DE3709134 A1 DE 3709134A1 DE 19873709134 DE19873709134 DE 19873709134 DE 3709134 A DE3709134 A DE 3709134A DE 3709134 A1 DE3709134 A1 DE 3709134A1
Authority
DE
Germany
Prior art keywords
layer
plane
substrate
gaas
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19873709134
Other languages
German (de)
English (en)
Inventor
Toshiro Hayakawa
Takahiro Suyama
Masafumi Kondo
Kohsei Takahashi
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3709134A1 publication Critical patent/DE3709134A1/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2912—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
DE19873709134 1985-10-14 1987-03-20 Halbleiterbauelement Granted DE3709134A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60229382A JPS6288318A (ja) 1985-10-14 1985-10-14 半導体装置の製造方法
GB8706194A GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device

Publications (1)

Publication Number Publication Date
DE3709134A1 true DE3709134A1 (de) 1988-09-29

Family

ID=39345493

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873709134 Granted DE3709134A1 (de) 1985-10-14 1987-03-20 Halbleiterbauelement

Country Status (3)

Country Link
JP (1) JPS6288318A (enExample)
DE (1) DE3709134A1 (enExample)
GB (1) GB2202371B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2708156B2 (ja) * 1987-07-27 1998-02-04 シャープ株式会社 半導体装置の製造方法
JP2750856B2 (ja) * 1987-11-12 1998-05-13 シャープ株式会社 半導体装置
JP2674043B2 (ja) * 1987-12-11 1997-11-05 ソニー株式会社 エピタキシャル成長法
JPH039515A (ja) * 1989-06-07 1991-01-17 Sharp Corp 半導体装置
JP3129112B2 (ja) * 1994-09-08 2001-01-29 住友電気工業株式会社 化合物半導体エピタキシャル成長方法とそのためのＩｎＰ基板
CN100453690C (zh) * 2006-07-21 2009-01-21 哈尔滨工业大学 GaAs基InSb薄膜的分子束外延生长方法
DE102011087628A1 (de) * 2011-12-02 2013-06-06 Bosch Mahle Turbo Systems Gmbh & Co. Kg Ladeeinrichtung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
CA1292550C (en) * 1985-09-03 1991-11-26 Masayoshi Umeno Epitaxial gallium arsenide semiconductor wafer and method of producing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Japanese Journal of Applied Physics, Bd. 19, 1980, Nr. 5, S. L225-L227 *

Also Published As

Publication number Publication date
JPS6288318A (ja) 1987-04-22
GB2202371B (en) 1991-03-20
GB8706194D0 (en) 1987-04-23
GB2202371A (en) 1988-09-21
JPH0473610B2 (enExample) 1992-11-24

Similar Documents

Publication Publication Date Title
DE3485924T2 (de) Verfahren zur herstellung einer halbleiterlaservorrichtung.
DE69131586T2 (de) Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung
DE2453347C2 (de) Halbleitervorrichtung, insbesondere Halbleiterlaser
DE69407455T2 (de) Halbleiterlaser
DE69004842T2 (de) Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung.
DE3688064T2 (de) Halbleitervorrichtung.
DE69119124T2 (de) Quaternäres II-VI-Halbleitermaterial für photonische Bauelemente
DE3779775T2 (de) Halbleiterlaser mit streifenfoermiger mesa-wellenleiterstruktur und dessen herstellungsverfahren.
DE68924841T2 (de) Optoelektronische Vorrichtung mit grossem Energiebandabstand und Herstellungsverfahren.
DE68908373T2 (de) Herstellungsverfahren für einen Halbleiterlaser mit nichtabsorbierender Spiegelstruktur.
DE69411364T2 (de) Halbleiterlaser
DE69129181T2 (de) Optische Halbleitervorrichtung
DE69407354T2 (de) Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren
DE69132934T2 (de) Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben
DE69904265T2 (de) Halbleiterlaser
DE69412946T2 (de) Lichtemittierende Halbleiterdiode und Herstellungsverfahren
DE69029453T2 (de) Halbleiteranordnung hergestellt mittels einer epitaxialen Technik und Verfahren zur Herstellung dieser Anordnung
DE69432345T2 (de) Halbleiterdiodenlaser
DE3486006T2 (de) Verfahren zur herstellung von halbleiterlasern.
DE2643503B2 (de) Verfahren zur Herstellung eines Injektionslasers
DE69102263T2 (de) Halbleiteranordnung mit einer auf einem strukturierten Substrat aufgewachsenen Schichtstruktur.
DE3855551T2 (de) Halbleiter-Laservorrichtung und deren Herstellungsverfahren
DE69118113T2 (de) Optische Halbleiteranordnung und ihr Herstellungsverfahren
DE69521556T2 (de) Herstellungsverfahren für eine optische Halbleitervorrichtung
DE2701102C3 (de) Halbleiter-Injektionslaser

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee