GB2202371B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2202371B
GB2202371B GB8706194A GB8706194A GB2202371B GB 2202371 B GB2202371 B GB 2202371B GB 8706194 A GB8706194 A GB 8706194A GB 8706194 A GB8706194 A GB 8706194A GB 2202371 B GB2202371 B GB 2202371B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
layer
misorienting
grin
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8706194A
Other languages
English (en)
Other versions
GB8706194D0 (en
GB2202371A (en
Inventor
Toshiro Hayakawa
Takahiro Suyama
Masafumi Kondo
Kohsei Takahashi
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP60229382A priority Critical patent/JPS6288318A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to GB8706194A priority patent/GB2202371B/en
Priority to DE19873709134 priority patent/DE3709134A1/de
Publication of GB8706194D0 publication Critical patent/GB8706194D0/en
Publication of GB2202371A publication Critical patent/GB2202371A/en
Application granted granted Critical
Publication of GB2202371B publication Critical patent/GB2202371B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2912—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
GB8706194A 1985-10-14 1987-03-16 Semiconductor device Expired GB2202371B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60229382A JPS6288318A (ja) 1985-10-14 1985-10-14 半導体装置の製造方法
GB8706194A GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device
DE19873709134 DE3709134A1 (de) 1985-10-14 1987-03-20 Halbleiterbauelement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60229382A JPS6288318A (ja) 1985-10-14 1985-10-14 半導体装置の製造方法
GB8706194A GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device

Publications (3)

Publication Number Publication Date
GB8706194D0 GB8706194D0 (en) 1987-04-23
GB2202371A GB2202371A (en) 1988-09-21
GB2202371B true GB2202371B (en) 1991-03-20

Family

ID=39345493

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8706194A Expired GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device

Country Status (3)

Country Link
JP (1) JPS6288318A (enExample)
DE (1) DE3709134A1 (enExample)
GB (1) GB2202371B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2708156B2 (ja) * 1987-07-27 1998-02-04 シャープ株式会社 半導体装置の製造方法
JP2750856B2 (ja) * 1987-11-12 1998-05-13 シャープ株式会社 半導体装置
JP2674043B2 (ja) * 1987-12-11 1997-11-05 ソニー株式会社 エピタキシャル成長法
JPH039515A (ja) * 1989-06-07 1991-01-17 Sharp Corp 半導体装置
JP3129112B2 (ja) * 1994-09-08 2001-01-29 住友電気工業株式会社 化合物半導体エピタキシャル成長方法とそのためのＩｎＰ基板
CN100453690C (zh) * 2006-07-21 2009-01-21 哈尔滨工业大学 GaAs基InSb薄膜的分子束外延生长方法
DE102011087628A1 (de) * 2011-12-02 2013-06-06 Bosch Mahle Turbo Systems Gmbh & Co. Kg Ladeeinrichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214610A2 (en) * 1985-09-03 1987-03-18 Daido Tokushuko Kabushiki Kaisha Epitaxial gallium arsenide semiconductor wafer and method of producing the same
GB2180689A (en) * 1985-07-20 1987-04-01 Plessey Co Plc Method of producing a heterostructure device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2180689A (en) * 1985-07-20 1987-04-01 Plessey Co Plc Method of producing a heterostructure device
EP0214610A2 (en) * 1985-09-03 1987-03-18 Daido Tokushuko Kabushiki Kaisha Epitaxial gallium arsenide semiconductor wafer and method of producing the same

Also Published As

Publication number Publication date
DE3709134A1 (de) 1988-09-29
JPS6288318A (ja) 1987-04-22
GB8706194D0 (en) 1987-04-23
GB2202371A (en) 1988-09-21
JPH0473610B2 (enExample) 1992-11-24

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060316