JPH0473610B2 - - Google Patents

Info

Publication number
JPH0473610B2
JPH0473610B2 JP60229382A JP22938285A JPH0473610B2 JP H0473610 B2 JPH0473610 B2 JP H0473610B2 JP 60229382 A JP60229382 A JP 60229382A JP 22938285 A JP22938285 A JP 22938285A JP H0473610 B2 JPH0473610 B2 JP H0473610B2
Authority
JP
Japan
Prior art keywords
layer
plane
gaas
growth
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60229382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6288318A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP60229382A priority Critical patent/JPS6288318A/ja
Priority to GB8706194A priority patent/GB2202371B/en
Priority to DE19873709134 priority patent/DE3709134A1/de
Publication of JPS6288318A publication Critical patent/JPS6288318A/ja
Publication of JPH0473610B2 publication Critical patent/JPH0473610B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2912—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP60229382A 1985-10-14 1985-10-14 半導体装置の製造方法 Granted JPS6288318A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60229382A JPS6288318A (ja) 1985-10-14 1985-10-14 半導体装置の製造方法
GB8706194A GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device
DE19873709134 DE3709134A1 (de) 1985-10-14 1987-03-20 Halbleiterbauelement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60229382A JPS6288318A (ja) 1985-10-14 1985-10-14 半導体装置の製造方法
GB8706194A GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6288318A JPS6288318A (ja) 1987-04-22
JPH0473610B2 true JPH0473610B2 (enExample) 1992-11-24

Family

ID=39345493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60229382A Granted JPS6288318A (ja) 1985-10-14 1985-10-14 半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JPS6288318A (enExample)
DE (1) DE3709134A1 (enExample)
GB (1) GB2202371B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2708156B2 (ja) * 1987-07-27 1998-02-04 シャープ株式会社 半導体装置の製造方法
JP2750856B2 (ja) * 1987-11-12 1998-05-13 シャープ株式会社 半導体装置
JP2674043B2 (ja) * 1987-12-11 1997-11-05 ソニー株式会社 エピタキシャル成長法
JPH039515A (ja) * 1989-06-07 1991-01-17 Sharp Corp 半導体装置
JP3129112B2 (ja) * 1994-09-08 2001-01-29 住友電気工業株式会社 化合物半導体エピタキシャル成長方法とそのためのＩｎＰ基板
CN100453690C (zh) * 2006-07-21 2009-01-21 哈尔滨工业大学 GaAs基InSb薄膜的分子束外延生长方法
DE102011087628A1 (de) * 2011-12-02 2013-06-06 Bosch Mahle Turbo Systems Gmbh & Co. Kg Ladeeinrichtung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
DE3676019D1 (de) * 1985-09-03 1991-01-17 Daido Steel Co Ltd Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung.

Also Published As

Publication number Publication date
DE3709134A1 (de) 1988-09-29
GB8706194D0 (en) 1987-04-23
GB2202371A (en) 1988-09-21
GB2202371B (en) 1991-03-20
JPS6288318A (ja) 1987-04-22

Similar Documents

Publication Publication Date Title
EP0232431B1 (en) Semiconductor device
US5619518A (en) Semiconductor laser diode
JP2001093837A (ja) 半導体薄膜構造とその作製法
US4894836A (en) Semiconductor device
US5027169A (en) Semiconductor device with substrate misorientation
US5157679A (en) Optoelectronic devices
JPS6288318A (ja) 半導体装置の製造方法
JP2647076B2 (ja) 半導体レーザ装置及びその製造方法
JP5185030B2 (ja) 半導体構造及びその半導体構造を用いた光半導体素子
US4716129A (en) Method for the production of semiconductor devices
JP2674474B2 (ja) 歪量子井戸半導体レーザの気相成長方法
US4783425A (en) Fabrication process of semiconductor lasers
JP2750856B2 (ja) 半導体装置
JPH10294524A (ja) 半導体レーザ
US5302847A (en) Semiconductor heterostructure having a capping layer preventing deleterious effects of As-P exchange
JP2002246695A (ja) 多孔質基板を用いた半導体デバイスの作製法及び半導体デバイス
JP4704614B2 (ja) 半導体素子及びその製造方法
JPH04188614A (ja) 化合物半導体装置及びその製造法
JP2876543B2 (ja) 半導体装置及びその製造法
JPH0141269B2 (enExample)
JPH0214591A (ja) 埋め込み型半導体レーザ素子
JPH088354B2 (ja) ヘテロ接合型電界効果トランジスタ
JPH07169701A (ja) ３−５族半導体薄膜の成長方法
JP2967719B2 (ja) 半導体結晶成長方法および半導体素子
JP2708156B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees