JPH0473610B2 - - Google Patents
Info
- Publication number
- JPH0473610B2 JPH0473610B2 JP60229382A JP22938285A JPH0473610B2 JP H0473610 B2 JPH0473610 B2 JP H0473610B2 JP 60229382 A JP60229382 A JP 60229382A JP 22938285 A JP22938285 A JP 22938285A JP H0473610 B2 JPH0473610 B2 JP H0473610B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- plane
- gaas
- growth
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 23
- 229910005542 GaSb Inorganic materials 0.000 claims description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 4
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 7
- 238000005253 cladding Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02398—Antimonides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60229382A JPS6288318A (ja) | 1985-10-14 | 1985-10-14 | 半導体装置の製造方法 |
| GB8706194A GB2202371B (en) | 1985-10-14 | 1987-03-16 | Semiconductor device |
| DE19873709134 DE3709134A1 (de) | 1985-10-14 | 1987-03-20 | Halbleiterbauelement |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60229382A JPS6288318A (ja) | 1985-10-14 | 1985-10-14 | 半導体装置の製造方法 |
| GB8706194A GB2202371B (en) | 1985-10-14 | 1987-03-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6288318A JPS6288318A (ja) | 1987-04-22 |
| JPH0473610B2 true JPH0473610B2 (enExample) | 1992-11-24 |
Family
ID=39345493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60229382A Granted JPS6288318A (ja) | 1985-10-14 | 1985-10-14 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS6288318A (enExample) |
| DE (1) | DE3709134A1 (enExample) |
| GB (1) | GB2202371B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2708156B2 (ja) * | 1987-07-27 | 1998-02-04 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2750856B2 (ja) * | 1987-11-12 | 1998-05-13 | シャープ株式会社 | 半導体装置 |
| JP2674043B2 (ja) * | 1987-12-11 | 1997-11-05 | ソニー株式会社 | エピタキシャル成長法 |
| JPH039515A (ja) * | 1989-06-07 | 1991-01-17 | Sharp Corp | 半導体装置 |
| JP3129112B2 (ja) * | 1994-09-08 | 2001-01-29 | 住友電気工業株式会社 | 化合物半導体エピタキシャル成長方法とそのためのＩｎＰ基板 |
| CN100453690C (zh) * | 2006-07-21 | 2009-01-21 | 哈尔滨工业大学 | GaAs基InSb薄膜的分子束外延生长方法 |
| DE102011087628A1 (de) * | 2011-12-02 | 2013-06-06 | Bosch Mahle Turbo Systems Gmbh & Co. Kg | Ladeeinrichtung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3325314A (en) * | 1961-10-27 | 1967-06-13 | Siemens Ag | Semi-conductor product and method for making same |
| US3379584A (en) * | 1964-09-04 | 1968-04-23 | Texas Instruments Inc | Semiconductor wafer with at least one epitaxial layer and methods of making same |
| US3476592A (en) * | 1966-01-14 | 1969-11-04 | Ibm | Method for producing improved epitaxial films |
| GB8518353D0 (en) * | 1985-07-20 | 1985-08-29 | Plessey Co Plc | Heterostructure device |
| EP0214610B1 (en) * | 1985-09-03 | 1990-12-05 | Daido Tokushuko Kabushiki Kaisha | Epitaxial gallium arsenide semiconductor wafer and method of producing the same |
-
1985
- 1985-10-14 JP JP60229382A patent/JPS6288318A/ja active Granted
-
1987
- 1987-03-16 GB GB8706194A patent/GB2202371B/en not_active Expired
- 1987-03-20 DE DE19873709134 patent/DE3709134A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2202371B (en) | 1991-03-20 |
| DE3709134A1 (de) | 1988-09-29 |
| JPS6288318A (ja) | 1987-04-22 |
| GB2202371A (en) | 1988-09-21 |
| GB8706194D0 (en) | 1987-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |