JPS6283749A - フオトマスクの欠陥修正方法 - Google Patents

フオトマスクの欠陥修正方法

Info

Publication number
JPS6283749A
JPS6283749A JP60224290A JP22429085A JPS6283749A JP S6283749 A JPS6283749 A JP S6283749A JP 60224290 A JP60224290 A JP 60224290A JP 22429085 A JP22429085 A JP 22429085A JP S6283749 A JPS6283749 A JP S6283749A
Authority
JP
Japan
Prior art keywords
photomask
gas
laser beam
defect
pinhole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60224290A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0458624B2 (cg-RX-API-DMAC7.html
Inventor
Shuichi Matsuda
修一 松田
Yaichiro Watakabe
渡壁　弥一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60224290A priority Critical patent/JPS6283749A/ja
Publication of JPS6283749A publication Critical patent/JPS6283749A/ja
Publication of JPH0458624B2 publication Critical patent/JPH0458624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP60224290A 1985-10-08 1985-10-08 フオトマスクの欠陥修正方法 Granted JPS6283749A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60224290A JPS6283749A (ja) 1985-10-08 1985-10-08 フオトマスクの欠陥修正方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60224290A JPS6283749A (ja) 1985-10-08 1985-10-08 フオトマスクの欠陥修正方法

Publications (2)

Publication Number Publication Date
JPS6283749A true JPS6283749A (ja) 1987-04-17
JPH0458624B2 JPH0458624B2 (cg-RX-API-DMAC7.html) 1992-09-18

Family

ID=16811453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60224290A Granted JPS6283749A (ja) 1985-10-08 1985-10-08 フオトマスクの欠陥修正方法

Country Status (1)

Country Link
JP (1) JPS6283749A (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0627664A1 (en) * 1993-06-04 1994-12-07 International Business Machines Corporation Method for the repair of phase shifting masks
WO2007065769A1 (de) * 2005-12-09 2007-06-14 Carl Zeiss Smt Ag Verfahren zur bearbeitung eines optischen elementes sowie optisches element
JP2012124371A (ja) * 2010-12-09 2012-06-28 Dainippon Printing Co Ltd 反射型マスクおよびその製造方法
JP2012230148A (ja) * 2011-04-25 2012-11-22 Fujitsu Semiconductor Ltd パターン欠陥修正方法及びパターン欠陥修正装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270991A (en) * 1975-12-10 1977-06-13 Mitsubishi Electric Corp Gas phase reactor by use of laser
JPS53135276A (en) * 1977-04-30 1978-11-25 Mitsubishi Electric Corp Correcting method for defect of photomask
JPS57109952A (en) * 1980-12-26 1982-07-08 Fujitsu Ltd Production of photomask plate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270991A (en) * 1975-12-10 1977-06-13 Mitsubishi Electric Corp Gas phase reactor by use of laser
JPS53135276A (en) * 1977-04-30 1978-11-25 Mitsubishi Electric Corp Correcting method for defect of photomask
JPS57109952A (en) * 1980-12-26 1982-07-08 Fujitsu Ltd Production of photomask plate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0627664A1 (en) * 1993-06-04 1994-12-07 International Business Machines Corporation Method for the repair of phase shifting masks
US5686206A (en) * 1993-06-04 1997-11-11 International Business Machines Corporation Method for the repair of lithographic masks
WO2007065769A1 (de) * 2005-12-09 2007-06-14 Carl Zeiss Smt Ag Verfahren zur bearbeitung eines optischen elementes sowie optisches element
US8435726B2 (en) 2005-12-09 2013-05-07 Carl Zeiss Smt Gmbh Method of processing an optical element and an optical element, in particular for a microlithographic projection exposure apparatus
JP2012124371A (ja) * 2010-12-09 2012-06-28 Dainippon Printing Co Ltd 反射型マスクおよびその製造方法
JP2012230148A (ja) * 2011-04-25 2012-11-22 Fujitsu Semiconductor Ltd パターン欠陥修正方法及びパターン欠陥修正装置

Also Published As

Publication number Publication date
JPH0458624B2 (cg-RX-API-DMAC7.html) 1992-09-18

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