JPS627149A - 半導体装置における書込み、読出し方法 - Google Patents
半導体装置における書込み、読出し方法Info
- Publication number
- JPS627149A JPS627149A JP60144563A JP14456385A JPS627149A JP S627149 A JPS627149 A JP S627149A JP 60144563 A JP60144563 A JP 60144563A JP 14456385 A JP14456385 A JP 14456385A JP S627149 A JPS627149 A JP S627149A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- voltage
- gate
- mos transistor
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000012212 insulator Substances 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract 2
- 239000000969 carrier Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 230000006386 memory function Effects 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60144563A JPS627149A (ja) | 1985-07-03 | 1985-07-03 | 半導体装置における書込み、読出し方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60144563A JPS627149A (ja) | 1985-07-03 | 1985-07-03 | 半導体装置における書込み、読出し方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS627149A true JPS627149A (ja) | 1987-01-14 |
| JPH0586864B2 JPH0586864B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-12-14 |
Family
ID=15365153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60144563A Granted JPS627149A (ja) | 1985-07-03 | 1985-07-03 | 半導体装置における書込み、読出し方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS627149A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7081653B2 (en) | 2001-12-14 | 2006-07-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device having mis-type transistors |
| JP2006318643A (ja) * | 2006-07-14 | 2006-11-24 | Toshiba Corp | 半導体記憶装置 |
| US7476939B2 (en) | 2004-11-04 | 2009-01-13 | Innovative Silicon Isi Sa | Memory cell having an electrically floating body transistor and programming technique therefor |
| US7477540B2 (en) | 2004-12-22 | 2009-01-13 | Innovative Silicon Isi Sa | Bipolar reading technique for a memory cell having an electrically floating body transistor |
| US7486563B2 (en) | 2004-12-13 | 2009-02-03 | Innovative Silicon Isi Sa | Sense amplifier circuitry and architecture to write data into and/or read from memory cells |
| US7492632B2 (en) | 2006-04-07 | 2009-02-17 | Innovative Silicon Isi Sa | Memory array having a programmable word length, and method of operating same |
| US7514748B2 (en) | 2002-04-18 | 2009-04-07 | Innovative Silicon Isi Sa | Semiconductor device |
| US7542345B2 (en) | 2006-02-16 | 2009-06-02 | Innovative Silicon Isi Sa | Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same |
| US7541616B2 (en) | 2001-06-18 | 2009-06-02 | Innovative Silicon Isi Sa | Semiconductor device |
| US7542340B2 (en) | 2006-07-11 | 2009-06-02 | Innovative Silicon Isi Sa | Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same |
| US7583538B2 (en) | 2006-04-18 | 2009-09-01 | Kabushiki Kaisha Toshiba | Semiconductor memory and read method of the same |
| US7606066B2 (en) | 2005-09-07 | 2009-10-20 | Innovative Silicon Isi Sa | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
| US9076543B2 (en) | 2009-07-27 | 2015-07-07 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
| US9559216B2 (en) | 2011-06-06 | 2017-01-31 | Micron Technology, Inc. | Semiconductor memory device and method for biasing same |
| US9812179B2 (en) | 2009-11-24 | 2017-11-07 | Ovonyx Memory Technology, Llc | Techniques for reducing disturbance in a semiconductor memory device |
| US10304837B2 (en) | 2007-11-29 | 2019-05-28 | Ovonyx Memory Technology, Llc | Integrated circuit having memory cell array including barriers, and method of manufacturing same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5567160A (en) * | 1978-11-14 | 1980-05-21 | Fujitsu Ltd | Semiconductor memory storage |
| JPS55113364A (en) * | 1979-02-22 | 1980-09-01 | Fujitsu Ltd | Semiconductor integrated circuit device |
| JPS56144574A (en) * | 1980-04-11 | 1981-11-10 | Fujitsu Ltd | Production of semiconductor device |
-
1985
- 1985-07-03 JP JP60144563A patent/JPS627149A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5567160A (en) * | 1978-11-14 | 1980-05-21 | Fujitsu Ltd | Semiconductor memory storage |
| JPS55113364A (en) * | 1979-02-22 | 1980-09-01 | Fujitsu Ltd | Semiconductor integrated circuit device |
| JPS56144574A (en) * | 1980-04-11 | 1981-11-10 | Fujitsu Ltd | Production of semiconductor device |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7541616B2 (en) | 2001-06-18 | 2009-06-02 | Innovative Silicon Isi Sa | Semiconductor device |
| US7081653B2 (en) | 2001-12-14 | 2006-07-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device having mis-type transistors |
| US7514748B2 (en) | 2002-04-18 | 2009-04-07 | Innovative Silicon Isi Sa | Semiconductor device |
| US7476939B2 (en) | 2004-11-04 | 2009-01-13 | Innovative Silicon Isi Sa | Memory cell having an electrically floating body transistor and programming technique therefor |
| US7486563B2 (en) | 2004-12-13 | 2009-02-03 | Innovative Silicon Isi Sa | Sense amplifier circuitry and architecture to write data into and/or read from memory cells |
| US7477540B2 (en) | 2004-12-22 | 2009-01-13 | Innovative Silicon Isi Sa | Bipolar reading technique for a memory cell having an electrically floating body transistor |
| US8873283B2 (en) | 2005-09-07 | 2014-10-28 | Micron Technology, Inc. | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
| US11031069B2 (en) | 2005-09-07 | 2021-06-08 | Ovonyx Memory Technology, Llc | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
| US10418091B2 (en) | 2005-09-07 | 2019-09-17 | Ovonyx Memory Technology, Llc | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
| US7606066B2 (en) | 2005-09-07 | 2009-10-20 | Innovative Silicon Isi Sa | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
| US7542345B2 (en) | 2006-02-16 | 2009-06-02 | Innovative Silicon Isi Sa | Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same |
| US7492632B2 (en) | 2006-04-07 | 2009-02-17 | Innovative Silicon Isi Sa | Memory array having a programmable word length, and method of operating same |
| US7583538B2 (en) | 2006-04-18 | 2009-09-01 | Kabushiki Kaisha Toshiba | Semiconductor memory and read method of the same |
| US7542340B2 (en) | 2006-07-11 | 2009-06-02 | Innovative Silicon Isi Sa | Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same |
| JP2006318643A (ja) * | 2006-07-14 | 2006-11-24 | Toshiba Corp | 半導体記憶装置 |
| US10304837B2 (en) | 2007-11-29 | 2019-05-28 | Ovonyx Memory Technology, Llc | Integrated circuit having memory cell array including barriers, and method of manufacturing same |
| US11081486B2 (en) | 2007-11-29 | 2021-08-03 | Ovonyx Memory Technology, Llc | Integrated circuit having memory cell array including barriers, and method of manufacturing same |
| US9076543B2 (en) | 2009-07-27 | 2015-07-07 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
| US9679612B2 (en) | 2009-07-27 | 2017-06-13 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
| US9812179B2 (en) | 2009-11-24 | 2017-11-07 | Ovonyx Memory Technology, Llc | Techniques for reducing disturbance in a semiconductor memory device |
| US9559216B2 (en) | 2011-06-06 | 2017-01-31 | Micron Technology, Inc. | Semiconductor memory device and method for biasing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0586864B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6787835B2 (en) | Semiconductor memories | |
| JP3613594B2 (ja) | 半導体素子およびこれを用いた半導体記憶装置 | |
| JPS627149A (ja) | 半導体装置における書込み、読出し方法 | |
| US7741668B2 (en) | Nonvolatile ferroelectric memory device | |
| KR960032759A (ko) | 메모리 장치 | |
| JP3467510B2 (ja) | Ｄｒａｍセル及びその製造方法 | |
| JP3634751B2 (ja) | 多数の抵抗性強誘電体メモリセルから成るメモリ装置 | |
| JP3039245B2 (ja) | 半導体メモリ装置 | |
| JPH04256361A (ja) | 半導体記憶装置 | |
| JPS6037620B2 (ja) | 半導体記憶装置 | |
| JP4042351B2 (ja) | 記憶装置 | |
| US4330849A (en) | Complementary semiconductor memory device | |
| US4250568A (en) | Capacitor semiconductor storage circuit | |
| JP2002521781A (ja) | 抵抗性強誘電記憶セル | |
| JPH09213812A (ja) | Ｄｒａｍセル及びｄｒａｍ | |
| JP3363038B2 (ja) | 半導体記憶装置 | |
| JPS6235559A (ja) | 半導体記憶装置 | |
| JP3434485B2 (ja) | ２トランジスタ単一キャパシタ強誘電性メモリ | |
| JPS5846865B2 (ja) | メモリ・セル | |
| JPS627150A (ja) | 半導体装置における書込み、読出し方法 | |
| JPS61222254A (ja) | 半導体記憶装置 | |
| JPS6370558A (ja) | 半導体メモリセル | |
| JPH0430747B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPS6142346B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPS62109367A (ja) | 半導体記憶装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |