JPS626673B2 - - Google Patents
Info
- Publication number
- JPS626673B2 JPS626673B2 JP55099531A JP9953180A JPS626673B2 JP S626673 B2 JPS626673 B2 JP S626673B2 JP 55099531 A JP55099531 A JP 55099531A JP 9953180 A JP9953180 A JP 9953180A JP S626673 B2 JPS626673 B2 JP S626673B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- resistor
- protection circuit
- voltage
- silicon resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9953180A JPS5724563A (en) | 1980-07-21 | 1980-07-21 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9953180A JPS5724563A (en) | 1980-07-21 | 1980-07-21 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5724563A JPS5724563A (en) | 1982-02-09 |
JPS626673B2 true JPS626673B2 (enrdf_load_stackoverflow) | 1987-02-12 |
Family
ID=14249794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9953180A Granted JPS5724563A (en) | 1980-07-21 | 1980-07-21 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5724563A (enrdf_load_stackoverflow) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0087155B1 (en) * | 1982-02-22 | 1991-05-29 | Kabushiki Kaisha Toshiba | Means for preventing the breakdown of an insulation layer in semiconductor devices |
JPH0658945B2 (ja) * | 1982-12-07 | 1994-08-03 | セイコーエプソン株式会社 | 半導体装置 |
JPS61100969A (ja) * | 1984-10-22 | 1986-05-19 | Nec Corp | 絶縁ゲ−ト保護半導体装置 |
US4713680A (en) * | 1986-06-30 | 1987-12-15 | Motorola, Inc. | Series resistive network |
JPH01149451A (ja) * | 1987-12-04 | 1989-06-12 | Rohm Co Ltd | Cmosの入力段ゲートの保護装置 |
JPH0758738B2 (ja) * | 1992-03-16 | 1995-06-21 | セイコーエプソン株式会社 | 半導体装置 |
JPH0758736B2 (ja) * | 1992-03-16 | 1995-06-21 | セイコーエプソン株式会社 | 半導体装置 |
JPH0758737B2 (ja) * | 1992-03-16 | 1995-06-21 | セイコーエプソン株式会社 | 半導体装置 |
-
1980
- 1980-07-21 JP JP9953180A patent/JPS5724563A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5724563A (en) | 1982-02-09 |
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