JPS5724563A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5724563A
JPS5724563A JP9953180A JP9953180A JPS5724563A JP S5724563 A JPS5724563 A JP S5724563A JP 9953180 A JP9953180 A JP 9953180A JP 9953180 A JP9953180 A JP 9953180A JP S5724563 A JPS5724563 A JP S5724563A
Authority
JP
Japan
Prior art keywords
resistor
polycrystalline
dielectric strength
metal
mosic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9953180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626673B2 (enrdf_load_stackoverflow
Inventor
Masahide Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9953180A priority Critical patent/JPS5724563A/ja
Publication of JPS5724563A publication Critical patent/JPS5724563A/ja
Publication of JPS626673B2 publication Critical patent/JPS626673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9953180A 1980-07-21 1980-07-21 Semiconductor device Granted JPS5724563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9953180A JPS5724563A (en) 1980-07-21 1980-07-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9953180A JPS5724563A (en) 1980-07-21 1980-07-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5724563A true JPS5724563A (en) 1982-02-09
JPS626673B2 JPS626673B2 (enrdf_load_stackoverflow) 1987-02-12

Family

ID=14249794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9953180A Granted JPS5724563A (en) 1980-07-21 1980-07-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5724563A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105369A (ja) * 1982-12-07 1984-06-18 Seiko Epson Corp 半導体装置
JPS61100969A (ja) * 1984-10-22 1986-05-19 Nec Corp 絶縁ゲ−ト保護半導体装置
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
JPH01149451A (ja) * 1987-12-04 1989-06-12 Rohm Co Ltd Ｃｍｏｓの入力段ゲートの保護装置
US5113230A (en) * 1982-02-22 1992-05-12 Tokyo Shibaura Denki Kabushi Kaisha Semiconductor device having a conductive layer for preventing insulation layer destruction
JPH0590521A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JPH0590523A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JPH0590522A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113230A (en) * 1982-02-22 1992-05-12 Tokyo Shibaura Denki Kabushi Kaisha Semiconductor device having a conductive layer for preventing insulation layer destruction
JPS59105369A (ja) * 1982-12-07 1984-06-18 Seiko Epson Corp 半導体装置
JPS61100969A (ja) * 1984-10-22 1986-05-19 Nec Corp 絶縁ゲ−ト保護半導体装置
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
JPH01149451A (ja) * 1987-12-04 1989-06-12 Rohm Co Ltd Ｃｍｏｓの入力段ゲートの保護装置
JPH0590521A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JPH0590523A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置
JPH0590522A (ja) * 1992-03-16 1993-04-09 Seiko Epson Corp 半導体装置

Also Published As

Publication number Publication date
JPS626673B2 (enrdf_load_stackoverflow) 1987-02-12

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