JPS6262457B2 - - Google Patents

Info

Publication number
JPS6262457B2
JPS6262457B2 JP56195137A JP19513781A JPS6262457B2 JP S6262457 B2 JPS6262457 B2 JP S6262457B2 JP 56195137 A JP56195137 A JP 56195137A JP 19513781 A JP19513781 A JP 19513781A JP S6262457 B2 JPS6262457 B2 JP S6262457B2
Authority
JP
Japan
Prior art keywords
aluminum
aluminum source
layer
diffusion
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56195137A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57121222A (en
Inventor
Punteru Hendoriku
Yan Wahenaaru Korunerisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS57121222A publication Critical patent/JPS57121222A/ja
Publication of JPS6262457B2 publication Critical patent/JPS6262457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56195137A 1980-12-09 1981-12-05 Method of producing semiconductor device Granted JPS57121222A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8006668A NL8006668A (nl) 1980-12-09 1980-12-09 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS57121222A JPS57121222A (en) 1982-07-28
JPS6262457B2 true JPS6262457B2 (en, 2012) 1987-12-26

Family

ID=19836296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56195137A Granted JPS57121222A (en) 1980-12-09 1981-12-05 Method of producing semiconductor device

Country Status (6)

Country Link
US (1) US4381957A (en, 2012)
EP (1) EP0054317B1 (en, 2012)
JP (1) JPS57121222A (en, 2012)
DE (1) DE3169109D1 (en, 2012)
IE (1) IE52979B1 (en, 2012)
NL (1) NL8006668A (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
DE3520699A1 (de) * 1985-06-10 1986-01-23 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Verfahren zum selektiven diffundieren von aluminium in ein siliziumsubstrat
DE3785127D1 (de) * 1986-09-30 1993-05-06 Siemens Ag Verfahren zur herstellung eines pn-uebergangs hoher spannungsfestigkeit.
DE3782608D1 (de) * 1986-09-30 1992-12-17 Siemens Ag Verfahren zum erzeugen eines p-dotierten halbleitergebiets in einem n-leitenden halbleiterkoerper.
US8481414B2 (en) 2011-04-08 2013-07-09 Micron Technology, Inc. Incorporating impurities using a discontinuous mask
CN113053736B (zh) * 2021-03-11 2024-05-03 捷捷半导体有限公司 一种半导体器件制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1227154B (de) * 1963-07-23 1966-10-20 Siemens Ag Verfahren zur Herstellung eines pn-UEbergangs in einer einkristallinen Halbleiteranordnung
FR1495766A (en, 2012) * 1965-12-10 1967-12-20
DE1811277C3 (de) * 1968-11-27 1978-06-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht
DE2506436C3 (de) * 1975-02-15 1980-05-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Diffusionsverfahren zum Herstellen aluminiumdotierter Isolationszonen für Halbleiterbauelemente
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
US4021269A (en) * 1975-11-26 1977-05-03 General Electric Company Post diffusion after temperature gradient zone melting
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
JPS5310265A (en) * 1976-07-15 1978-01-30 Mitsubishi Electric Corp Impurity diffusion method
US4066485A (en) * 1977-01-21 1978-01-03 Rca Corporation Method of fabricating a semiconductor device
JPS53118367A (en) * 1977-03-25 1978-10-16 Hitachi Ltd Manufacture of semiconductor
JPS54144889A (en) * 1978-05-04 1979-11-12 Hitachi Ltd Manufacture for semiconductor device
JPS55140241A (en) * 1979-04-19 1980-11-01 Matsushita Electronics Corp Method of fabricating semiconductor device

Also Published As

Publication number Publication date
IE52979B1 (en) 1988-04-27
EP0054317A1 (en) 1982-06-23
NL8006668A (nl) 1982-07-01
JPS57121222A (en) 1982-07-28
US4381957A (en) 1983-05-03
DE3169109D1 (en) 1985-03-28
EP0054317B1 (en) 1985-02-20
IE812870L (en) 1983-06-09

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