NL8006668A - Werkwijze voor het vervaardigen van een halfgeleiderinrichting. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleiderinrichting. Download PDF

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Publication number
NL8006668A
NL8006668A NL8006668A NL8006668A NL8006668A NL 8006668 A NL8006668 A NL 8006668A NL 8006668 A NL8006668 A NL 8006668A NL 8006668 A NL8006668 A NL 8006668A NL 8006668 A NL8006668 A NL 8006668A
Authority
NL
Netherlands
Prior art keywords
parts
aluminum
treatment
etching
aluminum source
Prior art date
Application number
NL8006668A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8006668A priority Critical patent/NL8006668A/nl
Priority to US06/321,960 priority patent/US4381957A/en
Priority to EP81201282A priority patent/EP0054317B1/en
Priority to DE8181201282T priority patent/DE3169109D1/de
Priority to JP56195137A priority patent/JPS57121222A/ja
Priority to IE2870/81A priority patent/IE52979B1/en
Publication of NL8006668A publication Critical patent/NL8006668A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
NL8006668A 1980-12-09 1980-12-09 Werkwijze voor het vervaardigen van een halfgeleiderinrichting. NL8006668A (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL8006668A NL8006668A (nl) 1980-12-09 1980-12-09 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US06/321,960 US4381957A (en) 1980-12-09 1981-11-16 Method of diffusing aluminum
EP81201282A EP0054317B1 (en) 1980-12-09 1981-11-20 Method of diffusing aluminium from a layer that contains aluminium into a silicon body
DE8181201282T DE3169109D1 (en) 1980-12-09 1981-11-20 Method of diffusing aluminium from a layer that contains aluminium into a silicon body
JP56195137A JPS57121222A (en) 1980-12-09 1981-12-05 Method of producing semiconductor device
IE2870/81A IE52979B1 (en) 1980-12-09 1981-12-07 Method of manufacturing a semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8006668A NL8006668A (nl) 1980-12-09 1980-12-09 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL8006668 1980-12-09

Publications (1)

Publication Number Publication Date
NL8006668A true NL8006668A (nl) 1982-07-01

Family

ID=19836296

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8006668A NL8006668A (nl) 1980-12-09 1980-12-09 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Country Status (6)

Country Link
US (1) US4381957A (en, 2012)
EP (1) EP0054317B1 (en, 2012)
JP (1) JPS57121222A (en, 2012)
DE (1) DE3169109D1 (en, 2012)
IE (1) IE52979B1 (en, 2012)
NL (1) NL8006668A (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
DE3520699A1 (de) * 1985-06-10 1986-01-23 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Verfahren zum selektiven diffundieren von aluminium in ein siliziumsubstrat
DE3785127D1 (de) * 1986-09-30 1993-05-06 Siemens Ag Verfahren zur herstellung eines pn-uebergangs hoher spannungsfestigkeit.
DE3782608D1 (de) * 1986-09-30 1992-12-17 Siemens Ag Verfahren zum erzeugen eines p-dotierten halbleitergebiets in einem n-leitenden halbleiterkoerper.
US8481414B2 (en) 2011-04-08 2013-07-09 Micron Technology, Inc. Incorporating impurities using a discontinuous mask
CN113053736B (zh) * 2021-03-11 2024-05-03 捷捷半导体有限公司 一种半导体器件制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1227154B (de) * 1963-07-23 1966-10-20 Siemens Ag Verfahren zur Herstellung eines pn-UEbergangs in einer einkristallinen Halbleiteranordnung
FR1495766A (en, 2012) * 1965-12-10 1967-12-20
DE1811277C3 (de) * 1968-11-27 1978-06-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht
DE2506436C3 (de) * 1975-02-15 1980-05-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Diffusionsverfahren zum Herstellen aluminiumdotierter Isolationszonen für Halbleiterbauelemente
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
US4021269A (en) * 1975-11-26 1977-05-03 General Electric Company Post diffusion after temperature gradient zone melting
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
JPS5310265A (en) * 1976-07-15 1978-01-30 Mitsubishi Electric Corp Impurity diffusion method
US4066485A (en) * 1977-01-21 1978-01-03 Rca Corporation Method of fabricating a semiconductor device
JPS53118367A (en) * 1977-03-25 1978-10-16 Hitachi Ltd Manufacture of semiconductor
JPS54144889A (en) * 1978-05-04 1979-11-12 Hitachi Ltd Manufacture for semiconductor device
JPS55140241A (en) * 1979-04-19 1980-11-01 Matsushita Electronics Corp Method of fabricating semiconductor device

Also Published As

Publication number Publication date
IE52979B1 (en) 1988-04-27
EP0054317A1 (en) 1982-06-23
JPS6262457B2 (en, 2012) 1987-12-26
JPS57121222A (en) 1982-07-28
US4381957A (en) 1983-05-03
DE3169109D1 (en) 1985-03-28
EP0054317B1 (en) 1985-02-20
IE812870L (en) 1983-06-09

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Legal Events

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A1B A search report has been drawn up
BV The patent application has lapsed