JPS6255240B2 - - Google Patents
Info
- Publication number
- JPS6255240B2 JPS6255240B2 JP58179363A JP17936383A JPS6255240B2 JP S6255240 B2 JPS6255240 B2 JP S6255240B2 JP 58179363 A JP58179363 A JP 58179363A JP 17936383 A JP17936383 A JP 17936383A JP S6255240 B2 JPS6255240 B2 JP S6255240B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- test
- state
- cell group
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012360 testing method Methods 0.000 claims description 97
- 239000004065 semiconductor Substances 0.000 claims description 39
- 230000007547 defect Effects 0.000 claims description 23
- 230000006870 function Effects 0.000 claims description 10
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 18
- 238000001514 detection method Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 230000002950 deficient Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- Hardware Redundancy (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58179363A JPS6072045A (ja) | 1983-09-29 | 1983-09-29 | 半導体メモリ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58179363A JPS6072045A (ja) | 1983-09-29 | 1983-09-29 | 半導体メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6072045A JPS6072045A (ja) | 1985-04-24 |
| JPS6255240B2 true JPS6255240B2 (enExample) | 1987-11-18 |
Family
ID=16064538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58179363A Granted JPS6072045A (ja) | 1983-09-29 | 1983-09-29 | 半導体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6072045A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4872168A (en) * | 1986-10-02 | 1989-10-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Integrated circuit with memory self-test |
| JPS63164100A (ja) * | 1986-12-26 | 1988-07-07 | Hiroshi Nakamura | 半導体集積回路メモリ |
| EP0462743A1 (en) * | 1990-06-20 | 1991-12-27 | AT&T Corp. | Method and apparatus for accomplishing output-specific data compaction |
| JPH07254286A (ja) * | 1994-03-16 | 1995-10-03 | Nippon Motorola Ltd | 低消費電力半導体メモリ装置 |
-
1983
- 1983-09-29 JP JP58179363A patent/JPS6072045A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6072045A (ja) | 1985-04-24 |
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