JPS625337B2 - - Google Patents

Info

Publication number
JPS625337B2
JPS625337B2 JP7980580A JP7980580A JPS625337B2 JP S625337 B2 JPS625337 B2 JP S625337B2 JP 7980580 A JP7980580 A JP 7980580A JP 7980580 A JP7980580 A JP 7980580A JP S625337 B2 JPS625337 B2 JP S625337B2
Authority
JP
Japan
Prior art keywords
vapor pressure
diffusion
junction
temperature
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7980580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS575325A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP7980580A priority Critical patent/JPS575325A/ja
Priority to FR8110656A priority patent/FR2485811B1/fr
Priority to GB8117243A priority patent/GB2081010B/en
Priority to DE19813123231 priority patent/DE3123231A1/de
Publication of JPS575325A publication Critical patent/JPS575325A/ja
Priority to US06/628,974 priority patent/US4619718A/en
Priority to US06/636,408 priority patent/US4685979A/en
Publication of JPS625337B2 publication Critical patent/JPS625337B2/ja
Priority to US07/171,247 priority patent/US4819058A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02409—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Device Packages (AREA)
JP7980580A 1980-05-29 1980-06-12 Semicondoctor p-n junction device and manufacture thereof Granted JPS575325A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP7980580A JPS575325A (en) 1980-06-12 1980-06-12 Semicondoctor p-n junction device and manufacture thereof
FR8110656A FR2485811B1 (fr) 1980-06-12 1981-05-27 Dispositif semi-conducteur a jonction pn, et procede de fabrication de celui-ci
GB8117243A GB2081010B (en) 1980-06-12 1981-06-05 Semiconductor device with a pn junction and its method of manufacture
DE19813123231 DE3123231A1 (de) 1980-06-12 1981-06-11 "halbleiteranordnung und verfahren zu dessen herstellung"
US06/628,974 US4619718A (en) 1980-06-12 1984-07-10 Method of manufacturing a Group II-VI semiconductor device having a PN junction
US06/636,408 US4685979A (en) 1980-05-29 1984-07-31 Method of manufacturing a group II-VI compound semiconductor device having a pn junction
US07/171,247 US4819058A (en) 1980-06-12 1988-03-21 Semiconductor device having a pn junction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7980580A JPS575325A (en) 1980-06-12 1980-06-12 Semicondoctor p-n junction device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS575325A JPS575325A (en) 1982-01-12
JPS625337B2 true JPS625337B2 (enrdf_load_stackoverflow) 1987-02-04

Family

ID=13700428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7980580A Granted JPS575325A (en) 1980-05-29 1980-06-12 Semicondoctor p-n junction device and manufacture thereof

Country Status (5)

Country Link
US (3) US4619718A (enrdf_load_stackoverflow)
JP (1) JPS575325A (enrdf_load_stackoverflow)
DE (1) DE3123231A1 (enrdf_load_stackoverflow)
FR (1) FR2485811B1 (enrdf_load_stackoverflow)
GB (1) GB2081010B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11787217B2 (en) 2019-04-16 2023-10-17 3M Innovative Properties Company Over-laminate film and graphic laminate

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863183A (ja) * 1981-10-09 1983-04-14 Semiconductor Res Found ２−６族間化合物の結晶成長法
JPS58176991A (ja) * 1982-04-09 1983-10-17 Sanyo Electric Co Ltd 半導体レ−ザ
JPS598383A (ja) * 1982-07-06 1984-01-17 Semiconductor Res Found ＺｎＳｅ緑色発光ダイオ−ド
FR2588885B1 (fr) * 1985-10-22 1987-11-27 Labo Electronique Physique Creuset pour l'epitaxie en phase liquide de couches semiconductrices de composition controlee
US5140385A (en) * 1987-03-27 1992-08-18 Misawa Co., Ltd. Light emitting element and method of manufacture
DE3887274D1 (de) * 1987-11-10 1994-03-03 Toshiba Kawasaki Kk Thermische Behandlung von einer II-VI-Halbleiterverbindung.
US5045894A (en) * 1988-06-29 1991-09-03 Hitachi, Ltd. Compound semiconductor light emitting device
US5252499A (en) * 1988-08-15 1993-10-12 Rothschild G F Neumark Wide band-gap semiconductors having low bipolar resistivity and method of formation
US4904618A (en) * 1988-08-22 1990-02-27 Neumark Gertrude F Process for doping crystals of wide band gap semiconductors
US5139960A (en) * 1988-11-28 1992-08-18 Xerox Corporation Interstitital doping in III-V semiconductors to avoid or suppress DX center formation
JPH0387073A (ja) * 1989-06-27 1991-04-11 Matsushita Electric Ind Co Ltd 半導体発光素子
JPH0391270A (ja) * 1989-09-01 1991-04-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
JP2525930B2 (ja) * 1990-05-15 1996-08-21 スタンレー電気株式会社 ▲ｉｉ▼―▲ｖｉ▼族化合物半導体の結晶成長方法
US7235819B2 (en) * 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
JP3098773B2 (ja) * 1991-03-18 2000-10-16 トラスティーズ・オブ・ボストン・ユニバーシティ 高絶縁性単結晶窒化ガリウム薄膜の作製及びドープ方法
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US5351255A (en) * 1992-05-12 1994-09-27 North Carolina State University Of Raleigh Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
US5818072A (en) * 1992-05-12 1998-10-06 North Carolina State University Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
WO1993023882A1 (en) * 1992-05-19 1993-11-25 California Institute Of Technology Wide band-gap semiconductor light emitters
US5382812A (en) * 1993-04-14 1995-01-17 Kobe Development Corporation Diamond and II-VI heterojunction semiconductor light emitting device
JPH07120953A (ja) * 1993-10-25 1995-05-12 Fuji Xerox Co Ltd 電子写真感光体およびそれを用いた画像形成方法
JPH09148341A (ja) * 1995-11-17 1997-06-06 Stanley Electric Co Ltd ２族―６族化合物半導体結晶の熱処理方法
WO2006054580A1 (ja) * 2004-11-18 2006-05-26 Nippon Mining & Metals Co., Ltd. ＣｄＴｅ系化合物半導体単結晶

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BE536985A (enrdf_load_stackoverflow) * 1954-04-01
US3326730A (en) * 1965-04-13 1967-06-20 Ibm Preparing group ii-vi compound semiconductor devices
US3568306A (en) * 1965-09-25 1971-03-09 Matsushita Electric Ind Co Ltd Method of making photovoltaic device by electroplating
US3549434A (en) * 1968-09-19 1970-12-22 Gen Electric Low resisitivity group iib-vib compounds and method of formation
US3578507A (en) * 1969-04-28 1971-05-11 Zenith Radio Corp Method of producing non-opaque p-type wide band gap semiconductor materials
US3732471A (en) * 1969-11-10 1973-05-08 Corning Glass Works Method of obtaining type conversion in zinc telluride and resultant p-n junction devices
FR2071085A5 (enrdf_load_stackoverflow) * 1969-12-17 1971-09-17 Thomson Csf
GB1352449A (en) * 1970-07-28 1974-05-08 Sumitomo Electric Industries Semiconductor production
US3870473A (en) * 1970-09-02 1975-03-11 Hughes Aircraft Co Tandem furnace crystal growing device
US3670220A (en) * 1971-02-26 1972-06-13 Zenith Radio Corp Pn junctions in znse, zns, or zns/znse and semiconductor devices comprising such junctions
US3745073A (en) * 1971-02-26 1973-07-10 Zenith Radio Corp Single-step process for making p-n junctions in zinc selenide
US3743553A (en) * 1971-06-18 1973-07-03 Honeywell Inc Pn junctions in mercury cadmium telluride
US3783051A (en) * 1972-04-25 1974-01-01 Matsushita Electric Ind Co Ltd Method of making light emitting diode with good brightness characteristic
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US4190486A (en) * 1973-10-04 1980-02-26 Hughes Aircraft Company Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment
US3940847A (en) * 1974-07-26 1976-03-02 The United States Of America As Represented By The Secretary Of The Air Force Method of fabricating ion implanted znse p-n junction devices
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
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US4087293A (en) * 1977-01-06 1978-05-02 Honeywell Inc. Silicon as donor dopant in Hg1-x Cdx Te
US4137544A (en) * 1977-07-05 1979-01-30 Honeywell Inc. Mercury cadmium telluride photodiode
US4263604A (en) * 1977-12-27 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Graded gap semiconductor detector
JPS5525159A (en) * 1978-08-10 1980-02-22 Kubota Ltd Automatic dispenser
US4377904A (en) * 1978-10-10 1983-03-29 Texas Instruments Incorporated Method of fabricating a narrow band-gap semiconductor CCD imaging device
JPS6037076B2 (ja) * 1980-06-11 1985-08-23 潤一 西澤 ３−６族化合物半導体の温度液相成長法
JPS577171A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of znsepn junction
JPS577131A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of p-n junction
JPS5863183A (ja) * 1981-10-09 1983-04-14 Semiconductor Res Found ２−６族間化合物の結晶成長法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11787217B2 (en) 2019-04-16 2023-10-17 3M Innovative Properties Company Over-laminate film and graphic laminate

Also Published As

Publication number Publication date
US4819058A (en) 1989-04-04
JPS575325A (en) 1982-01-12
GB2081010A (en) 1982-02-10
FR2485811B1 (fr) 1986-06-27
US4619718A (en) 1986-10-28
US4685979A (en) 1987-08-11
FR2485811A1 (fr) 1981-12-31
DE3123231C2 (enrdf_load_stackoverflow) 1988-05-05
DE3123231A1 (de) 1982-02-25
GB2081010B (en) 1984-04-26

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