JPH0463040B2 - - Google Patents
Info
- Publication number
- JPH0463040B2 JPH0463040B2 JP22495684A JP22495684A JPH0463040B2 JP H0463040 B2 JPH0463040 B2 JP H0463040B2 JP 22495684 A JP22495684 A JP 22495684A JP 22495684 A JP22495684 A JP 22495684A JP H0463040 B2 JPH0463040 B2 JP H0463040B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- epitaxial
- substrate
- mixed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 30
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 22
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 21
- 229910005540 GaP Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 7
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22495684A JPS61106497A (ja) | 1984-10-25 | 1984-10-25 | 燐化砒化ガリウムエピタキシヤル膜の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22495684A JPS61106497A (ja) | 1984-10-25 | 1984-10-25 | 燐化砒化ガリウムエピタキシヤル膜の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61106497A JPS61106497A (ja) | 1986-05-24 |
| JPH0463040B2 true JPH0463040B2 (enrdf_load_stackoverflow) | 1992-10-08 |
Family
ID=16821823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22495684A Granted JPS61106497A (ja) | 1984-10-25 | 1984-10-25 | 燐化砒化ガリウムエピタキシヤル膜の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61106497A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3792817B2 (ja) * | 1997-01-06 | 2006-07-05 | 信越半導体株式会社 | ＧａＡｓＰエピタキシャルウェーハ及びその製造方法 |
| US9524869B2 (en) | 2004-03-11 | 2016-12-20 | Epistar Corporation | Nitride-based semiconductor light-emitting device |
| US7928424B2 (en) * | 2004-03-11 | 2011-04-19 | Epistar Corporation | Nitride-based light-emitting device |
| US8562738B2 (en) | 2004-03-11 | 2013-10-22 | Epistar Corporation | Nitride-based light-emitting device |
| JP6863366B2 (ja) * | 2016-03-30 | 2021-04-21 | ソニーグループ株式会社 | 光電変換素子および光電変換装置 |
-
1984
- 1984-10-25 JP JP22495684A patent/JPS61106497A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61106497A (ja) | 1986-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |