JPS6158971B2 - - Google Patents

Info

Publication number
JPS6158971B2
JPS6158971B2 JP15833177A JP15833177A JPS6158971B2 JP S6158971 B2 JPS6158971 B2 JP S6158971B2 JP 15833177 A JP15833177 A JP 15833177A JP 15833177 A JP15833177 A JP 15833177A JP S6158971 B2 JPS6158971 B2 JP S6158971B2
Authority
JP
Japan
Prior art keywords
layer
mixed crystal
constant
epitaxial film
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15833177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5491050A (en
Inventor
Shinichi Hasegawa
Hisanori Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP15833177A priority Critical patent/JPS5491050A/ja
Publication of JPS5491050A publication Critical patent/JPS5491050A/ja
Publication of JPS6158971B2 publication Critical patent/JPS6158971B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP15833177A 1977-12-28 1977-12-28 Method of growing vapor of compound semiconductor epitaxial film Granted JPS5491050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15833177A JPS5491050A (en) 1977-12-28 1977-12-28 Method of growing vapor of compound semiconductor epitaxial film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15833177A JPS5491050A (en) 1977-12-28 1977-12-28 Method of growing vapor of compound semiconductor epitaxial film

Publications (2)

Publication Number Publication Date
JPS5491050A JPS5491050A (en) 1979-07-19
JPS6158971B2 true JPS6158971B2 (enrdf_load_stackoverflow) 1986-12-13

Family

ID=15669295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15833177A Granted JPS5491050A (en) 1977-12-28 1977-12-28 Method of growing vapor of compound semiconductor epitaxial film

Country Status (1)

Country Link
JP (1) JPS5491050A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152960A (ja) * 1987-12-07 1989-06-15 Sansha Electric Mfg Co Ltd アーク電源装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS#V46#M4=1975 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152960A (ja) * 1987-12-07 1989-06-15 Sansha Electric Mfg Co Ltd アーク電源装置

Also Published As

Publication number Publication date
JPS5491050A (en) 1979-07-19

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