JPS6244835B2 - - Google Patents
Info
- Publication number
- JPS6244835B2 JPS6244835B2 JP17014180A JP17014180A JPS6244835B2 JP S6244835 B2 JPS6244835 B2 JP S6244835B2 JP 17014180 A JP17014180 A JP 17014180A JP 17014180 A JP17014180 A JP 17014180A JP S6244835 B2 JPS6244835 B2 JP S6244835B2
- Authority
- JP
- Japan
- Prior art keywords
- density
- region
- layer
- light emitting
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17014180A JPS5793589A (en) | 1980-12-02 | 1980-12-02 | Gap light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17014180A JPS5793589A (en) | 1980-12-02 | 1980-12-02 | Gap light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5793589A JPS5793589A (en) | 1982-06-10 |
JPS6244835B2 true JPS6244835B2 (enrdf_load_stackoverflow) | 1987-09-22 |
Family
ID=15899420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17014180A Granted JPS5793589A (en) | 1980-12-02 | 1980-12-02 | Gap light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5793589A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS599565U (ja) * | 1982-07-08 | 1984-01-21 | 三洋電機株式会社 | ガリウム燐発光ダイオ−ド |
JP2817577B2 (ja) * | 1993-05-31 | 1998-10-30 | 信越半導体株式会社 | GaP純緑色発光素子基板 |
EP1156534A4 (en) | 1999-10-29 | 2006-09-06 | Shinetsu Handotai Kk | LIGHT-EMITTING DEVICE WITH GALLIUM PHOSPHIDE |
-
1980
- 1980-12-02 JP JP17014180A patent/JPS5793589A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5793589A (en) | 1982-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6120600A (en) | Double heterojunction light emitting diode with gallium nitride active layer | |
JP3635757B2 (ja) | AlGaInP発光ダイオード | |
JP2650730B2 (ja) | 炭化珪素半導体を用いたpn接合型発光ダイオード | |
US5344791A (en) | Diffusion control of p-n junction location in multilayer heterostructure light emitting devices | |
KR100305572B1 (ko) | 발광다이오드및그제조방법 | |
US4414558A (en) | Hetero-junction light-emitting diode | |
JP3163217B2 (ja) | 発光ダイオード及びその製造方法 | |
US4354140A (en) | Light-emitting semiconductor | |
JPS6244835B2 (enrdf_load_stackoverflow) | ||
JPH055191B2 (enrdf_load_stackoverflow) | ||
US5032539A (en) | Method of manufacturing green light emitting diode | |
US3934260A (en) | Red light-emitting gallium phosphide device | |
JP2001226200A (ja) | 低抵抗p型単結晶ZnSおよびその製造方法 | |
JPH08139358A (ja) | エピタキシャルウエーハ | |
JP3633806B2 (ja) | エピタキシャルウエハ及び、これを用いて製造される発光ダイオード | |
JP3057547B2 (ja) | 緑色発光ダイオード | |
Weyrich | Light emitting diodes for the visible spectrum | |
KR100389738B1 (ko) | 단파장 산화아연 발광소자 및 그 제조방법 | |
US4284467A (en) | Method for making semiconductor material | |
JP2000349334A (ja) | 発光ダイオードおよびその製造方法 | |
JPS63213378A (ja) | 半導体発光素子の製造方法 | |
US5886369A (en) | Epitaxial wafer for GaP pure green light-emitting diode and GaP pure green light-emitting diode | |
JP2545212B2 (ja) | 青色発光素子 | |
JPH0330311B2 (enrdf_load_stackoverflow) | ||
JPS6158991B2 (enrdf_load_stackoverflow) |