JPS6249623A - X線露光マスク - Google Patents
X線露光マスクInfo
- Publication number
- JPS6249623A JPS6249623A JP60160689A JP16068985A JPS6249623A JP S6249623 A JPS6249623 A JP S6249623A JP 60160689 A JP60160689 A JP 60160689A JP 16068985 A JP16068985 A JP 16068985A JP S6249623 A JPS6249623 A JP S6249623A
- Authority
- JP
- Japan
- Prior art keywords
- film
- exposure mask
- ray
- ray exposure
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 4
- 239000006096 absorbing agent Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 35
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 229910004205 SiNX Inorganic materials 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 241000981595 Zoysia japonica Species 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101100289061 Drosophila melanogaster lili gene Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60160689A JPS6249623A (ja) | 1985-07-19 | 1985-07-19 | X線露光マスク |
DE19863624566 DE3624566A1 (de) | 1985-07-19 | 1986-07-21 | Maske fuer roentgenstrahl-lithographie |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60160689A JPS6249623A (ja) | 1985-07-19 | 1985-07-19 | X線露光マスク |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6249623A true JPS6249623A (ja) | 1987-03-04 |
Family
ID=15720336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60160689A Pending JPS6249623A (ja) | 1985-07-19 | 1985-07-19 | X線露光マスク |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS6249623A (enrdf_load_stackoverflow) |
DE (1) | DE3624566A1 (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0217627A (ja) * | 1988-07-06 | 1990-01-22 | Fujitsu Ltd | X線露光装置 |
JPH02181908A (ja) * | 1989-01-09 | 1990-07-16 | Canon Inc | X線マスク構造体 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52105777A (en) * | 1976-03-02 | 1977-09-05 | Toshiba Corp | Microscopic diagram transcribing device |
JPS55157739A (en) * | 1979-05-29 | 1980-12-08 | Nec Corp | X-ray exposure mask |
JPS6068339A (ja) * | 1983-09-26 | 1985-04-18 | Canon Inc | リソグラフィ−用マスク構造体 |
JPS60180123A (ja) * | 1984-02-13 | 1985-09-13 | Yokogawa Hewlett Packard Ltd | X線マスク用構造体 |
JPS60186840A (ja) * | 1984-02-16 | 1985-09-24 | ヒューレット・パッカード・カンパニー | X線マスクのための陽極接着方法及び装置 |
JPS60198819A (ja) * | 1984-03-23 | 1985-10-08 | Canon Inc | リソグラフイ−用マスク構造体 |
JPS60251620A (ja) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | X線マスク |
JPS6135449A (ja) * | 1984-07-07 | 1986-02-19 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | レントゲンリトグラフイ用マスク |
JPS61140942A (ja) * | 1984-12-13 | 1986-06-28 | Canon Inc | リソグラフイ−用マスク構造体 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3435177A1 (de) * | 1983-09-26 | 1985-04-11 | Canon K.K., Tokio/Tokyo | Maske fuer lithographische zwecke |
-
1985
- 1985-07-19 JP JP60160689A patent/JPS6249623A/ja active Pending
-
1986
- 1986-07-21 DE DE19863624566 patent/DE3624566A1/de active Granted
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52105777A (en) * | 1976-03-02 | 1977-09-05 | Toshiba Corp | Microscopic diagram transcribing device |
JPS55157739A (en) * | 1979-05-29 | 1980-12-08 | Nec Corp | X-ray exposure mask |
JPS6068339A (ja) * | 1983-09-26 | 1985-04-18 | Canon Inc | リソグラフィ−用マスク構造体 |
JPS60180123A (ja) * | 1984-02-13 | 1985-09-13 | Yokogawa Hewlett Packard Ltd | X線マスク用構造体 |
JPS60186840A (ja) * | 1984-02-16 | 1985-09-24 | ヒューレット・パッカード・カンパニー | X線マスクのための陽極接着方法及び装置 |
JPS60198819A (ja) * | 1984-03-23 | 1985-10-08 | Canon Inc | リソグラフイ−用マスク構造体 |
JPS60251620A (ja) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | X線マスク |
JPS6135449A (ja) * | 1984-07-07 | 1986-02-19 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | レントゲンリトグラフイ用マスク |
JPS61140942A (ja) * | 1984-12-13 | 1986-06-28 | Canon Inc | リソグラフイ−用マスク構造体 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0217627A (ja) * | 1988-07-06 | 1990-01-22 | Fujitsu Ltd | X線露光装置 |
JPH02181908A (ja) * | 1989-01-09 | 1990-07-16 | Canon Inc | X線マスク構造体 |
Also Published As
Publication number | Publication date |
---|---|
DE3624566A1 (de) | 1987-04-16 |
DE3624566C2 (enrdf_load_stackoverflow) | 1989-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4286194B2 (ja) | ペリクルフレーム、および該フレームを用いたフォトリソグラフィー用ペリクル | |
KR20010030280A (ko) | 노광 마스크, 노광 마스크 제조 방법, 및 노광 마스크를사용한 반도체 디바이스 제조 방법 | |
JPS6249623A (ja) | X線露光マスク | |
US5882826A (en) | Membrane and mask, and exposure apparatus using the mask, and device producing method using the mask | |
TW577108B (en) | Optical device and the manufacturing method thereof, optical system, and manufacturing method of exposure device and micro-device | |
JPH0345526B2 (enrdf_load_stackoverflow) | ||
JPH11307442A (ja) | X線マスク及びx線マスクブランク並びにそれらの製造方法 | |
JP4983313B2 (ja) | 転写マスクおよびその製造方法 | |
JPS6061750A (ja) | X線露光マスクの製造方法 | |
JPS641926B2 (enrdf_load_stackoverflow) | ||
JP3110955B2 (ja) | 荷電粒子線露光用マスク製造方法 | |
JP3451431B2 (ja) | X線露光用マスク及びその製造方法 | |
JPS63150918A (ja) | X線露光用マスク | |
JP2655543B2 (ja) | X線マスクブランクス及びx線マスク構造体 | |
JPH07120623B2 (ja) | X線マスクおよびその製造方法 | |
JPH09106937A (ja) | マスク製造方法、その方法を用いて作成されたマスク構造体、そのマスク構造体を用いた露光装置、デバイス生産方法及びそれにより生産されたデバイス | |
JPS59163825A (ja) | X線露光マスクおよびその製造方法 | |
JPH0322686B2 (enrdf_load_stackoverflow) | ||
JPS61185929A (ja) | X線露光マスク | |
JPH07201706A (ja) | 半導体装置の製造方法、x線マスク構造体の製造方法、x線マスク構造体、該x線マスク構造体を用いたx線露光方法及びx線露光装置、該x線露光方法を適用して製造される半導体装置 | |
JPS6365621A (ja) | X線露光マスク | |
JP3354900B2 (ja) | X線マスクおよびその製造方法 | |
JP2004186369A (ja) | 転写マスクブランク、転写マスク並びにその転写マスクを用いた転写方法 | |
JPH04143266A (ja) | 低応力膜形成装置 | |
JPH04338628A (ja) | X線リソグラフィ用マスクおよびその製造方法 |